Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF2L8GHB0G

SF2L8GHB0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,837 -
SF2L8GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MURF8L60HC0G

MURF8L60HC0G

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

3,753 -
MURF8L60HC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS29 M4G

SS29 M4G

DIODE SCHOTTKY 90V 2A DO214AA

Taiwan Semiconductor Corporation

2,252 -
SS29 M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1A A0G

UF1A A0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

2,004 -
UF1A A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SR504HA0G

SR504HA0G

DIODE SCHOTTKY 40V 5A DO201AD

Taiwan Semiconductor Corporation

3,263 -
SR504HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BLHMHG

S1BLHMHG

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

2,302 -
S1BLHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 100 V 100 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF31G B0G

SF31G B0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3,721 -
SF31G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1001G C0G

SF1001G C0G

DIODE GEN PURP 50V 10A TO220AB

Taiwan Semiconductor Corporation

3,698 -
SF1001G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29HM4G

SS29HM4G

DIODE SCHOTTKY 90V 2A DO214AA

Taiwan Semiconductor Corporation

3,329 -
SS29HM4G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1AHA0G

UF1AHA0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,549 -
UF1AHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SR505 A0G

SR505 A0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

3,760 -
SR505 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL M2G

S1DL M2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

2,154 -
S1DL M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF31GHB0G

SF31GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3,488 -
SF31GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1001GHC0G

SF1001GHC0G

DIODE GEN PURP 50V 10A TO220AB

Taiwan Semiconductor Corporation

2,976 -
SF1001GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29L M2G

SS29L M2G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

2,420 -
SS29L M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1B A0G

UF1B A0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

3,168 -
UF1B A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SR505HA0G

SR505HA0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

2,584 -
SR505HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL MHG

S1DL MHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3,413 -
S1DL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
S1FLB-GS18

S1FLB-GS18

DIODE GP 100V 700MA DO219AB

Vishay General Semiconductor - Diodes Division

2,557 -
S1FLB-GS18

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 1.8 µs 10 µA @ 100 V 100 V 700mA -55°C ~ 150°C 1.1 V @ 1 A
SCS308AMC

SCS308AMC

DIODES SILICON CARBIDE

Rohm Semiconductor

2,373 -
SCS308AMC

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 400pF @ 1V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A (DC) 175°C (Max) 1.5 V @ 8 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER