Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-40HF40

VS-40HF40

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division

3,935 -
VS-40HF40

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 400 V 400 V 40A -65°C ~ 190°C 1.3 V @ 125 A
CDBER70

CDBER70

DIODE SCHOTTKY 70V 70MA 0503

Comchip Technology

3,346 -
CDBER70

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz 5 ns 100 nA @ 50 V 70 V 70mA 125°C (Max) 1 V @ 15 mA
S1J-M3/5AT

S1J-M3/5AT

DIODE GPP 1A 600V DO-214AC

Vishay General Semiconductor - Diodes Division

2,924 -
S1J-M3/5AT

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.8 µs 1 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
STTH8R06D

STTH8R06D

DIODE GEN PURP 600V 8A TO220AC

STMicroelectronics

2,581 -
STTH8R06D

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 30 µA @ 600 V 600 V 8A 175°C (Max) 2.9 V @ 8 A
MMBD4448HW-7-F

MMBD4448HW-7-F

DIODE GEN PURP 80V 250MA SOT323

Diodes Incorporated

2,135 -
MMBD4448HW-7-F

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 3.5pF @ 6V, 1MHz 4 ns 100 nA @ 70 V 80 V 250mA -65°C ~ 150°C 1.25 V @ 150 mA
D4025LTP

D4025LTP

DIODE GEN PURP 400V 15.9A TO220

Littelfuse Inc.

2,931 -
D4025LTP

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 4 µs 10 µA @ 400 V 400 V 15.9A -40°C ~ 125°C -
VS-40HF60

VS-40HF60

DIODE GEN PURP 600V 40A DO203AB

Vishay General Semiconductor - Diodes Division

2,248 -
VS-40HF60

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 600 V 600 V 40A -65°C ~ 190°C 1.3 V @ 125 A
SF28G B0G

SF28G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,849 -
SF28G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR840 C0G

MUR840 C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

2,787 -
MUR840 C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 50 ns 5 µA @ 400 V 400 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS25L MHG

SS25L MHG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3,386 -
SS25L MHG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR105HA0G

SR105HA0G

DIODE SCHOTTKY 50V 1A DO204AL

Taiwan Semiconductor Corporation

2,568 -
SR105HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 1A -55°C ~ 150°C 700 mV @ 1 A
SR310HA0G

SR310HA0G

DIODE SCHOTTKY 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,682 -
SR310HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1AL MHG

S1AL MHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

3,705 -
S1AL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF28GHB0G

SF28GHB0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,481 -
SF28GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MUR840HC0G

MUR840HC0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

3,289 -
MUR840HC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 400 V 400 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS25LHM2G

SS25LHM2G

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3,002 -
SS25LHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR106HA0G

SR106HA0G

DIODE SCHOTTKY 60V 1A DO204AL

Taiwan Semiconductor Corporation

3,145 -
SR106HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
SR315HA0G

SR315HA0G

DIODE SCHOTTKY 150V 3A DO201AD

Taiwan Semiconductor Corporation

2,718 -
SR315HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 850 mV @ 3 A
S1ALHM2G

S1ALHM2G

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

2,157 -
S1ALHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF2L4G B0G

SF2L4G B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,628 -
SF2L4G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER