Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SR509 A0G

SR509 A0G

DIODE SCHOTTKY 90V 5A DO201AD

Taiwan Semiconductor Corporation

3,578 -
SR509 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1DLHMHG

S1DLHMHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3,771 -
S1DLHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF33G B0G

SF33G B0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

2,119 -
SF33G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1003G C0G

SF1003G C0G

DIODE GEN PURP 150V 10A TO220AB

Taiwan Semiconductor Corporation

3,282 -
SF1003G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29LHMHG

SS29LHMHG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

2,055 -
SS29LHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1DHA0G

UF1DHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,428 -
UF1DHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SR509HA0G

SR509HA0G

DIODE SCHOTTKY 90V 5A DO201AD

Taiwan Semiconductor Corporation

3,975 -
SR509HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1GL M2G

S1GL M2G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2,592 -
S1GL M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF33GHB0G

SF33GHB0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

3,032 -
SF33GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1003GHC0G

SF1003GHC0G

DIODE GEN PURP 150V 10A TO220AB

Taiwan Semiconductor Corporation

3,387 -
SF1003GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS310L M2G

SS310L M2G

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation

3,838 -
SS310L M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
UF1G A0G

UF1G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,029 -
UF1G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SR510HA0G

SR510HA0G

DIODE SCHOTTKY 100V 5A DO201AD

Taiwan Semiconductor Corporation

3,631 -
SR510HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1GL MHG

S1GL MHG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

3,068 -
S1GL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF34G B0G

SF34G B0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,448 -
SF34G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1004G C0G

SF1004G C0G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation

3,036 -
SF1004G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS310L MHG

SS310L MHG

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation

3,836 -
SS310L MHG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
UF1GHA0G

UF1GHA0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,070 -
UF1GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SR515HA0G

SR515HA0G

DIODE SCHOTTKY 150V 5A DO201AD

Taiwan Semiconductor Corporation

2,842 -
SR515HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 1.05 V @ 5 A
S1GLHM2G

S1GLHM2G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2,002 -
S1GLHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER