Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-16FL100S05

VS-16FL100S05

DIODE GEN PURP 1KV 16A DO203AA

Vishay General Semiconductor - Diodes Division

3,817 -
VS-16FL100S05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 16A -65°C ~ 150°C 1.4 V @ 16 A
BAS19W RVG

BAS19W RVG

DIODE GEN PURP 100V 200MA SOT323

Taiwan Semiconductor Corporation

3,369 -
BAS19W RVG

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 100 mA
XBW1SS400-G

XBW1SS400-G

SWITCHING DIODE

Torex Semiconductor Ltd

2,937 -
XBW1SS400-G

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 0.5pF @ 0V, 1MHz 4 ns 100 nA @ 80 V 80 V 100mA 150°C 1.2 V @ 100 mA
DSEP12-12B

DSEP12-12B

DIODE GEN PURP 1.2KV 15A TO220AC

IXYS

2,578 -
DSEP12-12B

Datenblatt

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 100 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 3.25 V @ 15 A
1N4005B-G

1N4005B-G

DIODE GEN PURP 600V 1A DO41

Comchip Technology

2,082 -
1N4005B-G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
RHRG3060-F085

RHRG3060-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

2,673 -
RHRG3060-F085

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.1 V @ 30 A
VS-25FR120

VS-25FR120

DIODE GEN PURP 1.2KV 25A DO203AA

Vishay General Semiconductor - Diodes Division

3,121 -
VS-25FR120

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 1200 V 1200 V 25A -65°C ~ 175°C 1.3 V @ 78 A
A1N4148WS-HF

A1N4148WS-HF

AUTOMOTIVE DIODE SWITCHING 100V

Comchip Technology

3,584 -
A1N4148WS-HF

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 75 V 200mA -65°C ~ 150°C 1.25 V @ 150 mA
SF2L6GHB0G

SF2L6GHB0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,207 -
SF2L6GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
MURF10L60 C0G

MURF10L60 C0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

2,613 -
MURF10L60 C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 5 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SS26LHM2G

SS26LHM2G

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

3,443 -
SS26LHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR115 A0G

SR115 A0G

DIODE SCHOTTKY 150V 1A DO204AL

Taiwan Semiconductor Corporation

3,377 -
SR115 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR503 A0G

SR503 A0G

DIODE SCHOTTKY 30V 5A DO201AD

Taiwan Semiconductor Corporation

2,554 -
SR503 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BL MHG

S1BL MHG

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

2,641 -
S1BL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 100 V 100 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF2L8G B0G

SF2L8G B0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3,544 -
SF2L8G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
MURF8L60 C0G

MURF8L60 C0G

DIODE GEN PURP 600V 8A ITO220AC

Taiwan Semiconductor Corporation

3,795 -
MURF8L60 C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS26LHMHG

SS26LHMHG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

2,343 -
SS26LHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR115HA0G

SR115HA0G

DIODE SCHOTTKY 150V 1A DO204AL

Taiwan Semiconductor Corporation

2,331 -
SR115HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SR503HA0G

SR503HA0G

DIODE SCHOTTKY 30V 5A DO201AD

Taiwan Semiconductor Corporation

2,628 -
SR503HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BLHM2G

S1BLHM2G

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

2,144 -
S1BLHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 100 V 100 V 1A -55°C ~ 175°C 1.1 V @ 1 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER