Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR860HC0G

MUR860HC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2,672 -
MUR860HC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 50 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.7 V @ 8 A
SS25LHMHG

SS25LHMHG

DIODE SCHOTTKY 50V 2A SUB SMA

Taiwan Semiconductor Corporation

3,473 -
SS25LHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 50 V 50 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR109 A0G

SR109 A0G

DIODE SCHOTTKY 90V 1A DO204AL

Taiwan Semiconductor Corporation

3,349 -
SR109 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 1 A
SR320HA0G

SR320HA0G

DIODE SCHOTTKY 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,327 -
SR320HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
S1ALHMHG

S1ALHMHG

DIODE GEN PURP 50V 1A SUB SMA

Taiwan Semiconductor Corporation

3,589 -
S1ALHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 50 V 50 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF2L4GHB0G

SF2L4GHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,963 -
SF2L4GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
MUR8L60 C0G

MUR8L60 C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2,048 -
MUR8L60 C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS26L M2G

SS26L M2G

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

3,353 -
SS26L M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR109HA0G

SR109HA0G

DIODE SCHOTTKY 90V 1A DO204AL

Taiwan Semiconductor Corporation

2,620 -
SR109HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 850 mV @ 1 A
SR502 A0G

SR502 A0G

DIODE SCHOTTKY 20V 5A DO201AD

Taiwan Semiconductor Corporation

3,043 -
SR502 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BB M4G

S1BB M4G

DIODE GEN PURP 100V 1A DO214AA

Taiwan Semiconductor Corporation

3,353 -
S1BB M4G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SF2L6G B0G

SF2L6G B0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,636 -
SF2L6G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
MUR8L60HC0G

MUR8L60HC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2,121 -
MUR8L60HC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 600 V 600 V 8A -55°C ~ 175°C 1.3 V @ 8 A
SS26L MHG

SS26L MHG

DIODE SCHOTTKY 60V 2A SUB SMA

Taiwan Semiconductor Corporation

3,696 -
SS26L MHG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 60 V 60 V 2A -55°C ~ 150°C 700 mV @ 2 A
SR110HA0G

SR110HA0G

DIODE SCHOTTKY 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,117 -
SR110HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 850 mV @ 1 A
SR502HA0G

SR502HA0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

3,498 -
SR502HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 125°C 550 mV @ 5 A
S1BL M2G

S1BL M2G

DIODE GEN PURP 100V 1A SUB SMA

Taiwan Semiconductor Corporation

3,140 -
S1BL M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 100 V 100 V 1A -55°C ~ 175°C 1.1 V @ 1 A
BAT86S-TAP

BAT86S-TAP

DIODE SCHOTTKY 50V 200MA DO35

Vishay General Semiconductor - Diodes Division

2,450 -
BAT86S-TAP

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 8pF @ 1V, 1MHz - 5 µA @ 40 V 50 V 200mA (DC) 125°C (Max) 900 mV @ 100 mA
S1K-M3/5AT

S1K-M3/5AT

DIODE GPP 1A 800V DO-214AC

Vishay General Semiconductor - Diodes Division

3,504 -
S1K-M3/5AT

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.1 V @ 1 A
STTH1202D

STTH1202D

DIODE GEN PURP 200V 12A TO220AC

STMicroelectronics

2,171 -
STTH1202D

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 200 V 200 V 12A 175°C (Max) 1.1 V @ 12 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER