Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQPF27N25MOSFET N-CH 250V 14A TO220F |
1,000 | - |
|
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Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STP9NM60NMOSFET N-CH 600V 6.5A TO220AB |
680 | - |
|
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Tube | MDmesh™ II | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4 nC @ 10 V | ±25V | 452 pF @ 50 V | - | 70W (Tc) | 150°C (TJ) | Through Hole |
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FDD3670POWER FIELD-EFFECT TRANSISTOR, 3 |
3,669 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Ta) | 6V, 10V | 32mOhm @ 7.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 2490 pF @ 50 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDD850N10LPOWER FIELD-EFFECT TRANSISTOR, 1 |
2,996 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.7A (Tc) | 5V, 10V | 75mOhm @ 12A, 10V | 2.5V @ 250µA | 28.9 nC @ 10 V | ±20V | 1465 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFM120ATFPOWER FIELD-EFFECT TRANSISTOR, 2 |
3,973 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD12CN10NGOPTLMOS N-CHANNEL POWER MOSFET |
2,877 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFR3505PBFMOSFET N-CH 55V 30A DPAK |
2,467 | - |
|
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Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2030 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFS4227TRLPBFIRFS4227 - 12V-300V N-CHANNEL PO |
3,702 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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IPI70R950CEPOWER FIELD-EFFECT TRANSISTOR |
3,108 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA057N06N3GIPA057N06 - 12V-300V N-CHANNEL P |
2,436 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMS7578MOSFET N-CH 25V 17A/28A 8PQFN |
2,855 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 5.8mOhm @ 17A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 1625 pF @ 13 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDH50N50_F133MOSFET N-CH 500V 48A TO247 |
2,969 | - |
|
![]() Datenblatt |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | - | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | ±20V | 6460 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDPF770N15APOWER FIELD-EFFECT TRANSISTOR, 1 |
2,278 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 11.2 nC @ 10 V | ±20V | 765 pF @ 75 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFZ48ZSMOSFET N-CH 55V 61A D2PAK |
2,482 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFR6215TRPBFIRFR6215 - 20V-250V P-CHANNEL PO |
3,578 | - |
|
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK7Y113-100EXMOSFET N-CH 100V 12A LFPAK56 |
2,443 | - |
|
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 113mOhm @ 5A, 10V | 4V @ 1mA | 10.4 nC @ 10 V | ±20V | 601 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFS4615TRLPBFIRFS4615 - 12V-300V N-CHANNEL PO |
3,481 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD80R4K5P7POWER FIELD-EFFECT TRANSISTOR |
2,078 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPG20N04S4-08IPG20N04 - 20V-40V N-CHANNEL AUT |
3,947 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMC2512SDCPOWER FIELD-EFFECT TRANSISTOR, 3 |
3,500 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 2.5V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 3W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |