Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPW65R045C746A, 650V, 0.045OHM, N-CHANNEL M |
2,592 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
HUF76629D3STR4885N-CHANNEL LOGIC LEVEL ULTRAFET P |
2,930 | - |
|
![]() Datenblatt |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 43 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
AUIRFS6535TRLMOSFET N-CH 300V 19A D2PAK |
2,874 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
TF412T5GSMALL SIGNAL FIELD-EFFECT TRANSI |
3,581 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
CPH3448-TL-WSMALL SIGNAL FIELD-EFFECT TRANSI |
3,284 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 50mOhm @ 2A, 4.5V | - | 4.7 nC @ 4.5 V | ±12V | 430 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
![]() |
FCH104N60POWER FIELD-EFFECT TRANSISTOR, 3 |
3,674 | - |
|
![]() Datenblatt |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 4165 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
FCP099N60EMOSFET N-CH 600V 37A TO220-3 |
2,521 | - |
|
![]() Datenblatt |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114 nC @ 10 V | ±20V | 3465 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP80R750P7IPP80R750 - 800V COOLMOS N-CHANN |
3,582 | - |
|
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FDS5680SMALL SIGNAL FIELD-EFFECT TRANSI |
2,349 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 20mOhm @ 8A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1850 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
PMPB20EN,115MOSFET N-CH 30V 7.2A DFN2020MD-6 |
2,997 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 19.5mOhm @ 7A, 10V | 2V @ 250µA | 10.8 nC @ 10 V | ±20V | 435 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
FQA90N15POWER FIELD-EFFECT TRANSISTOR, 9 |
3,938 | - |
|
![]() Datenblatt |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Tc) | 10V | 18mOhm @ 45A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±25V | 8700 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
FDMC7664POWER FIELD-EFFECT TRANSISTOR, 1 |
2,701 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18.8A (Ta), 24A (Tc) | 4.5V, 10V | 4.2mOhm @ 18.8A, 10V | 3V @ 250µA | 76 nC @ 10 V | ±20V | 4865 pF @ 15 V | - | 2.3W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
FDS8433AMOSFET P-CH 20V 5A 8SOIC |
3,691 | - |
|
![]() Datenblatt |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 4.5V | 47mOhm @ 5A, 4.5V | 1V @ 250µA | 28 nC @ 5 V | ±8V | 1130 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
FDMS0302SMOSFET N-CH 30V 29A/49A 8PQFN |
2,352 | - |
|
![]() Datenblatt |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 29A (Ta), 49A (Tc) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 3V @ 1mA | 109 nC @ 10 V | ±20V | 7350 pF @ 15 V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IPP045N10N3GOriginal and genuine |
8,500 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
FQP6N80CPOWER FIELD-EFFECT TRANSISTOR, 5 |
2,373 | - |
|
![]() Datenblatt |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 2.5Ohm @ 2.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1310 pF @ 25 V | - | 158W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRLU7843PBFMOSFET N-CH 30V 161A IPAK |
3,806 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | - | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPP60R165CP21A, 600V, 0.165OHM, N-CHANNEL M |
3,913 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
AUIRF7736M2TRMOSFET N-CH 40V 22A/108A DIRECT |
2,145 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108 nC @ 10 V | ±20V | 4267 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
AUIRFB8407MOSFET N-CH 40V 195A TO220AB |
2,985 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |