Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFN70N120SKSICFET N-CH 1200V 68A SOT227B |
2,272 | - |
|
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Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 161 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount |
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APL502LGMOSFET N-CH 500V 58A TO264 |
3,134 | - |
|
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BSM180C12P3C202SICFET N-CH 1200V 180A MODULE |
3,318 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 180A (Tc) | - | - | 5.6V @ 50mA | - | +22V, -4V | 9000 pF @ 10 V | - | 880W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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BSM300C12P3E201SICFET N-CH 1200V 300A MODULE |
2,133 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 300A (Tc) | - | - | 5.6V @ 80mA | - | +22V, -4V | 15000 pF @ 10 V | - | 1360W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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CSD13302WTMOSFET N-CH 12V 1.6A 4DSBGA |
965 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 1.6A (Ta) | 2.5V, 4.5V | 17.1mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8 nC @ 4.5 V | ±10V | 862 pF @ 6 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPSA70R1K2P7SAKMA1MOSFET N-CH 700V 4.5A TO251-3 |
106 | - |
|
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8 nC @ 400 V | ±16V | 174 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPS60R1K0PFD7SAKMA1MOSFET N-CH 650V 4.7A TO251-3 |
968 | - |
|
Tube | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.7A (Tc) | 10V | 1Ohm @ 1A, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±20V | 230 pF @ 400 V | - | 26W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
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IPA50R800CEXKSA2MOSFET N-CH 500V 4.1A TO220 |
490 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.1A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 26.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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SIHP6N40D-GE3MOSFET N-CH 400V 6A TO220AB |
288 | - |
|
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOT414MOSFET N-CH 100V 5.6A/43A TO220 |
357 | - |
|
![]() Datenblatt |
Tube | SDMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Ta), 43A (Tc) | 7V, 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 2200 pF @ 50 V | - | 1.9W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPAN70R750P7SXKSA1MOSFET N-CH 700V 6.5A TO220 |
148 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3 nC @ 10 V | ±16V | 306 pF @ 400 V | - | 20.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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RCX080N25MOSFET N-CH 250V 8A TO220FM |
495 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 1mA | 15 nC @ 10 V | ±30V | 840 pF @ 25 V | - | 2.23W (Ta), 35W (Tc) | 150°C (TJ) | Through Hole |
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IPA60R650CEXKSA1MOSFET N-CH 600V 7A TO220-FP |
400 | - |
|
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Tube | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IPS60R360PFD7SAKMA1MOSFET N-CH 650V 10A TO251-3 |
984 | - |
|
Tube | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | ±20V | 534 pF @ 400 V | - | 43W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
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IRF830APBF-BE3MOSFET N-CH 500V 5A TO220AB |
1,000 | - |
|
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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IRFI520GPBFMOSFET N-CH 100V 7.2A TO220-3 |
3,523 | - |
|
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Tc) | 10V | 270mOhm @ 4.3A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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R6004ENXMOSFET N-CH 600V 4A TO220FM |
122 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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IRF9Z14SPBFMOSFET P-CH 60V 6.7A D2PAK |
1,000 | - |
|
![]() Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHF10N40D-E3MOSFET N-CH 400V 10A TO220 |
652 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 526 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA50R280CEXKSA2MOSFET N-CH 500V 7.5A TO220 |
479 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.5A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 30.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |