Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN2R6-60PSQ127MOSFET N-CH 60V 150A TO220AB |
3,960 | - |
|
![]() Datenblatt |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 150A (Ta) | - | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 7629 pF @ 25 V | - | 326W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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FDN306PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,783 | - |
|
![]() Datenblatt |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2.6A (Ta) | 1.8V, 4.5V | 40mOhm @ 2.6A, 4.5V | 1.5V @ 250µA | 17 nC @ 4.5 V | ±8V | 1138 pF @ 6 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK39J60W5,S1VQMOSFET N-CH 600V 38.8A TO3P |
2,908 | - |
|
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole |
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IXTQ120N20PMOSFET N-CH 200V 120A TO3P |
2,350 | - |
|
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 250µA | 152 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SUP70090E-GE3MOSFET N-CH 100V 50A TO220AB |
2,638 | - |
|
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Bulk | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 7.5V, 10V | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 1950 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTQ36N50PMOSFET N-CH 500V 36A TO3P |
2,763 | - |
|
![]() Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG039N60EF-GE3MOSFET N-CH 600V 61A TO247AC |
3,251 | - |
|
![]() Datenblatt |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V | 40mOhm @ 32A, 10V | 5V @ 250µA | 126 nC @ 10 V | ±30V | 4323 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT56F50B2MOSFET N-CH 500V 56A T-MAX |
2,436 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT47N60BC3GMOSFET N-CH 600V 47A TO247 |
3,603 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFR36N60PMOSFET N-CH 600V 20A ISOPLUS247 |
3,401 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 200mOhm @ 18A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT47N60SC3GMOSFET N-CH 600V 47A D3PAK |
2,953 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK62N60W,S1VFMOSFET N-CH 600V 61.8A TO247 |
3,388 | - |
|
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 40mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole |
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IXFH24N90PMOSFET N-CH 900V 24A TO247AD |
3,746 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 24A (Tc) | 10V | 420mOhm @ 12A, 10V | 6.5V @ 1mA | 130 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC035SMA070SMOSFET N-CH 700V D3PAK |
2,582 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 1mA | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 206W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXFX98N50P3MOSFET N-CH 500V 98A PLUS247-3 |
2,817 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 98A (Tc) | 10V | 50mOhm @ 500mA, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT38F80LMOSFET N-CH 800V 41A TO264 |
3,778 | - |
|
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Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STP270N8F7MOSFET N CH 80V 180A TO220 |
3,771 | - |
|
![]() Datenblatt |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 250µA | 193 nC @ 10 V | ±20V | 13600 pF @ 50 V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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APT106N60LC6MOSFET N-CH 600V 106A TO264 |
3,453 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT48M80LMOSFET N-CH 800V 49A TO264 |
3,987 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 200mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP041N12N3GXKSA1MOSFET N-CH 120V 120A TO220-3 |
2,693 | - |
|
![]() Datenblatt |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 120A (Tc) | 10V | 4.1mOhm @ 100A, 10V | 4V @ 270µA | 211 nC @ 10 V | ±20V | 13800 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |