Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXKH70N60C5MOSFET N-CH 600V 70A TO247AD |
2,964 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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APT28M120LMOSFET N-CH 1200V 29A TO264 |
2,308 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPW65R115CFD7AXKSA1MOSFET N-CH 650V 21A TO247-3-41 |
2,917 | - |
|
![]() Datenblatt |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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IXFK66N85XMOSFET N-CH 850V 66A TO264 |
3,857 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT94N60L2C3GMOSFET N-CH 600V 94A 264 MAX |
2,740 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 94A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT5010JLLU2MOSFET N-CH 500V 41A SOT227 |
2,791 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXFX320N17T2MOSFET N-CH 170V 320A PLUS247-3 |
2,791 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFK320N17T2MOSFET N-CH 170V 320A TO264AA |
3,517 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 320A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFN64N60PMOSFET N-CH 600V 50A SOT227B |
3,228 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 96mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXFK64N60Q3MOSFET N-CH 600V 64A TO264AA |
2,073 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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GA20JT12-263TRANS SJT 1200V 45A D2PAK |
2,726 | - |
|
![]() Datenblatt |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | Surface Mount |
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MSC015SMA070SSICFET N-CH 700V 126A D3PAK |
2,981 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 126A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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APT10M11LVRGMOSFET N-CH 100V 100A TO264 |
3,455 | - |
|
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 11mOhm @ 50A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | ±30V | 10300 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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IXFK400N15X3MOSFET N-CH 150V 400A TO264 |
3,374 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT8020JLLMOSFET N-CH 800V 33A ISOTOP |
2,172 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT50M65JLLMOSFET N-CH 500V 58A ISOTOP |
2,165 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTB62N50LMOSFET N-CH 500V 62A PLUS264 |
3,588 | - |
|
![]() Datenblatt |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 31A, 20V | 5.5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC100SM70JCU2SICFET N-CH 700V 124A SOT227 |
2,774 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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MSC100SM70JCU3SICFET N-CH 700V 124A SOT227 |
3,708 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 124A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +25V, -10V | 4500 pF @ 700 V | - | 365W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT50M38JLLMOSFET N-CH 500V 88A ISOTOP |
2,529 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |