Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTT140P10TMOSFET P-CH 100V 140A TO268 |
3,644 | - |
|
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 12mOhm @ 70A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±15V | 31400 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SCT3060ARC14SICFET N-CH 650V 39A TO247-4L |
133 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Through Hole |
![]() |
IXTN660N04T4MOSFET N-CH 40V 660A SOT227B |
2,459 | - |
|
![]() Datenblatt |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 660A (Tc) | 10V | 0.85mOhm @ 100A, 10V | 4V @ 250µA | 860 nC @ 10 V | ±15V | 44000 pF @ 25 V | Current Sensing | 1040W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
![]() |
TK100L60W,VQMOSFET N-CH 600V 100A TO3P |
3,315 | - |
|
![]() Datenblatt |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | Super Junction | 797W (Tc) | 150°C (TJ) | Through Hole |
![]() |
IXFN60N80PMOSFET N-CH 800V 53A SOT-227B |
3,149 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 53A (Tc) | 10V | 140mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
![]() |
IXFN150N65X2MOSFET N-CH 650V 145A SOT227B |
3,115 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 145A (Tc) | 10V | 17mOhm @ 75A, 10V | 5V @ 8mA | 355 nC @ 10 V | ±30V | 21000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
![]() |
IXTN210P10TMOSFET P-CH 100V 210A SOT227B |
3,482 | - |
|
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 210A (Tc) | 10V | 7.5mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
![]() |
SCT3030ALHRC11SICFET N-CH 650V 70A TO247N |
222 | - |
|
![]() Datenblatt |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Through Hole |
![]() |
IXTX4N300P3HVMOSFET N-CH 3000V 4A TO247PLUSHV |
2,699 | - |
|
![]() Datenblatt |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 4A (Tc) | 10V | 12.5Ohm @ 2A, 10V | 5V @ 250µA | 139 nC @ 10 V | ±20V | 3680 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
VMO580-02FMOSFET N-CH 200V 580A Y3-LI |
2,129 | - |
|
![]() Datenblatt |
Bulk | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | 4V @ 50mA | 2750 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() |
BSM400C12P3G202SICFET N-CH 1200V 400A MODULE |
3,261 | - |
|
![]() Datenblatt |
Tray | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 400A (Tc) | - | - | 5.6V @ 106.8mA | - | +22V, -4V | 17000 pF @ 10 V | - | 1570W (Tc) | 175°C (TJ) | Chassis Mount |
![]() |
RJP020N06T100MOSFET N-CH 60V 2A MPT3 |
17,000 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 2.5V, 4.5V | 240mOhm @ 2A, 4.5V | 1.5V @ 1mA | 10 nC @ 4 V | ±12V | 160 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
![]() |
LND150N3-GMOSFET N-CH 500V 30MA TO92-3 |
3,351 | - |
|
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | Depletion Mode | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
AOT1N60MOSFET N-CH 600V 1.3A TO220 |
296 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.3A (Tc) | 10V | 9Ohm @ 650mA, 10V | 4.5V @ 250µA | 8 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
TN5325N3-GMOSFET N-CH 250V 215MA TO92-3 |
745 | - |
|
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 215mA (Ta) | 4.5V, 10V | 7Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 740mW (Ta) | - | Through Hole |
![]() |
BUK9675-55A,118MOSFET N-CH 55V 20A D2PAK |
872 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 4.5V, 10V | 68mOhm @ 10A, 10V | 2V @ 1mA | - | ±10V | 643 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
FQU1N60CTUMOSFET N-CH 600V 1A IPAK |
962 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | 4V @ 250µA | 6.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
PSMN2R2-30YLC/GFXPSMN2R2-30YLC/GFX |
2,907 | - |
|
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
PSMN2R9-25YLC/GFXPSMN2R9-25YLC/GFX |
3,567 | - |
|
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
PSMN2R9-30MLC/GFXPSMN2R9-30MLC/GFX |
3,114 | - |
|
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |