Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB65R099CFD7AATMA1MOSFET N-CH 650V 24A TO263-3 |
370 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 99mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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HUF75852G3MOSFET N-CH 150V 75A TO247-3 |
2,726 | - |
|
![]() Datenblatt |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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P3M12160K4SICFET N-CH 1200V 19A TO-247-4 |
200 | - |
|
![]() Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | - | +21V, -8V | - | - | 110W | -55°C ~ 175°C (TJ) | Through Hole |
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IPB60R045P7ATMA1MOSFET N-CH 600V 61A TO263-3-2 |
336 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 4V @ 1.08mA | 90 nC @ 10 V | ±20V | 3891 pF @ 400 V | - | 201W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB200N25N3GATMA1MOSFET N-CH 250V 64A D2PAK |
722 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPDD60R055CFD7XTMA1MOSFET N-CH 600V 52A HDSOP-10 |
1,101 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | - | 55mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2724 pF @ 400 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB65R065C7ATMA2MOSFET N-CH 650V 33A TO263-3 |
834 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4.5V @ 200µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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E3M0120090DSICFET N-CH 900V 23A TO247-3 |
411 | - |
|
![]() Datenblatt |
Tube | E-Series, Automotive | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 900 V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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P3M12080K3SICFET N-CH 1200V 47A TO-247-3 |
148 | - |
|
![]() Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A | 15V | 96mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +21V, -8V | - | - | 221W | -55°C ~ 175°C (TJ) | Through Hole |
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P3M12080K4SICFET N-CH 1200V 47A TO-247-4 |
140 | - |
|
![]() Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A | 15V | 96mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +21V, -8V | - | - | 221W | -55°C ~ 175°C (TJ) | Through Hole |
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P3M06040K4SICFET N-CH 650V 68A TO247-4 |
150 | - |
|
![]() Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | - | +20V, -8V | - | - | 254W | -55°C ~ 175°C (TJ) | Through Hole |
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IPB60R040CFD7ATMA1MOSFET N-CH 650V 50A TO263-3-2 |
713 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4.5V @ 1.25mA | 108 nC @ 10 V | ±20V | 4351 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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UJ4C075044B7S750V/44MOHM, N-OFF SIC CASCODE |
198 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | SiCFET (Silicon Carbide) | 750 V | 35.6A (Tc) | 12V | 56mOhm @ 25A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 181W (Tc) | -55°C ~ 175°C (TJ) | |
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IPDD60R045CFD7XTMA1MOSFET N-CH 600V 61A HDSOP-10 |
1,332 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | - | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NTE2973MOSFET-N-CHAN ENHANCEMENT TO-3P |
216 | - |
|
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Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 14A (Tc) | 10V | 850mOhm @ 7A, 10V | 4V @ 1mA | - | ±30V | 2900 pF @ 25 V | - | 275W (Tc) | -55°C ~ 150°C | Through Hole |
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IRF830PBF-BE3MOSFET N-CH 500V 4.5A TO220AB |
2,732 | - |
|
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
STP200N3LLMOSFET N-CH 30V 120A TO220 |
937 | - |
|
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 2.4mOhm @ 60A, 10V | 2.5V @ 250µA | 53 nC @ 4.5 V | ±20V | 5200 pF @ 25 V | - | 176.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
STP160N3LLMOSFET N-CH 30V 120A TO220 |
717 | - |
|
![]() Datenblatt |
Tube | STripFET™ H6 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2.5V @ 250µA | 42 nC @ 4.5 V | ±20V | 3500 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
CSD18504KCSMOSFET N-CH 40V 53A/100A TO220-3 |
143 | - |
|
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Tube | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 53A (Ta), 100A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 250µA | 25 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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GPI65030DFNGANFET N-CH 650V 30A DFN8X8 |
156 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.2V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |