Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN6R5-25YLC/GFXPSMN6R5-25YLC/GFX |
2,868 | - |
|
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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CPM2-1200-0080BMOSFET NCH 1200V 36A DIE |
3,000 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CPM2-1200-0160BMOSFET NCH 1200V 36A DIE |
2,393 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CPMF-1200-S080BSICFET N-CH 1200V 50A DIE |
2,965 | - |
|
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Bulk | Z-FET™ | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 50A (Tj) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8 nC @ 20 V | +25V, -5V | 1915 pF @ 800 V | - | 313mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
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CPMF-1200-S160BSICFET N-CH 1200V 28A DIE |
3,649 | - |
|
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Bulk | Z-FET™ | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 28A (Tj) | 20V | 220mOhm @ 10A, 20V | 4V @ 1mA | 47.1 nC @ 20 V | +25V, -5V | 928 pF @ 800 V | - | 202W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
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C2M0080170PSICFET N-CH 1700V 40A TO247-4 |
3,349 | - |
|
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Tube | C2M™ | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 40A (Tc) | 20V | 125mOhm @ 28A, 20V | 4V @ 10mA | 120 nC @ 20 V | +25V, -10V | 2250 pF @ 1000 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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E3M0065090DSICFET N-CH 900V 35A TO247-3 |
3,796 | - |
|
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Tube | E-Series, Automotive | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 84.5mOhm @ 20A, 15V | 3.5V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP3306PBFIRFP3306 - 12V-300V N-CHANNEL PO |
2,933 | - |
|
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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PSMN2R0-30PL,127NOW NEXPERIA PSMN2R0-30PL - 100A |
3,280 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 15A, 10V | 2.15V @ 1mA | 117 nC @ 10 V | ±20V | 6810 pF @ 12 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FDP032N08B-F102MOSFET N-CH 80V 120A TO220-3 |
3,599 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 4.5V @ 250µA | 144 nC @ 10 V | ±20V | 10965 pF @ 40 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4332PBFIRFB4332 - 12V-300V N-CHANNEL PO |
2,154 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5860 pF @ 25 V | - | 390W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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BUK7Y65-100EXTRANSISTOR >30MHZ |
3,974 | - |
|
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PSMN9R1-30YL,115NOW NEXPERIA PSMN9R1-30YL - 57A |
3,409 | - |
|
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 57A (Tc) | 4.5V, 10V | 9.1mOhm @ 15A, 10V | 2.15V @ 1mA | 16.7 nC @ 10 V | ±20V | 894 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | ||
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FDS6375SMALL SIGNAL FIELD-EFFECT TRANSI |
3,124 | - |
|
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 2.5V, 4.5V | 24mOhm @ 8A, 4.5V | 1.5V @ 250µA | 36 nC @ 4.5 V | ±8V | 2694 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | |
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FDP047N08-F102MOSFET N-CH 75V 164A TO220-3 |
3,390 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 164A (Tc) | 10V | 4.7Ohm @ 80A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±20V | 9415 pF @ 25 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PMCM4401UNEZPMCM4401UNE - 20V, N-CHANNEL TRE |
3,580 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | - | 2.5V, 4.5V | - | - | 6.2 nC @ 4.5 V | - | - | - | 400mW | 150°C (TJ) | Surface Mount |
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PSMN6R1-25MLD115NOW NEXPERIA PSMN6R1-25MLD - POW |
3,729 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF640NSTRLPBFHEXFET POWER MOSFET |
3,904 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1160 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFP4468PBFIRFP4468 - 12V-300V N-CHANNEL PO |
2,333 | - |
|
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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IRLR9343TRPBFIRLR9343 - 20V-250V P-CHANNEL PO |
3,952 | - |
|
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47 nC @ 10 V | ±20V | 660 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |