Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4AM17-91POWER N AND P CHANNEL MOSFETS |
38,792 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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H5N2513PL-EN-CHANNEL POWER MOSFET |
1,189 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFK40N90PMOSFET N-CH 900V 40A TO264AA |
270 | - |
|
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Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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H5N5011PL-EN-CHANNEL POWER MOSFET |
1,435 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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UF4SC120023K4S1200V/23MOHM SIC STACKED FAST CA |
574 | - |
|
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Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 53A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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NTE2392MOSFET N-CHANNEL 100V 40A TO3 |
936 | - |
|
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Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 55mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TW030N120C,S1FG3 1200V SIC-MOSFET TO-247 30MO |
175 | - |
|
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Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | Through Hole |
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IXTX240N075L2MOSFET N-CH 75V 240A PLUS247-3 |
280 | - |
|
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Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 10V | 7mOhm @ 120A, 10V | 4.5V @ 3mA | 546 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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4AK17-91N-CHANNEL POWER MOSFET |
29,649 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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MRF9030GMR130W RF PWR FET TO270GULL |
500 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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HF9969-91AUTOMOTIVE POWER MOSFET |
2,400 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IMW120R020M1HXKSA1SIC DISCRETE |
3,455 | - |
|
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Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 98A (Tc) | 15V, 18V | 26.9mOhm @ 41A, 18V | 5.2V @ 17.6mA | 83 nC @ 18 V | +20V, -5V | 3460 nF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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2SK1971-EN-CHANNEL POWER MOSFET |
1,331 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPI50N10S3L16AKSA1MOSFET N-CH 100V 50A TO262-3 |
10,000 | - |
|
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Bulk,Tube | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB80P04P405ATMA1MOSFET P-CH 40V 80A TO263-3 |
2,077 | - |
|
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Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | 4V @ 250µA | 151 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB80P04P4L04ATMA1MOSFET P-CH 40V 80A TO263-3 |
2,553 | - |
|
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Tape & Reel (TR),Bulk | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | ±16V | 3800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMN6010SCTB-13MOSFET BVDSS: 41V~60V TO263 T&R |
2,533 | - |
|
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 128A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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DMNH6010SCTB-13MOSFET BVDSS: 41V~60V TO263 T&R |
3,007 | - |
|
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Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 133A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFSL7434PBFMOSFET N-CH 40V 195A TO262 |
3,436 | - |
|
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Tube | HEXFET®, StrongIRFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB65R225C7ATMA2MOSFET N-CH 650V 11A TO263-3 |
2,158 | - |
|
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Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |