Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTHL050N65S3HFMOSFET N-CH 650V 58A TO247-3 |
896 | - |
|
![]() Datenblatt |
Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 125 nC @ 10 V | ±30V | 5017 pF @ 400 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMZA65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2,928 | - |
|
![]() Datenblatt |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFSL4410ZPBFMOSFET N-CH 100V 97A TO262 |
2,389 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQA16N50-F109MOSFET N-CH 500V 16A TO3P |
2,693 | - |
|
Tube,Tube | QFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 8A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
HUF75639S3MOSFET N-CH 100V 56A I2PAK |
2,300 | - |
|
![]() Datenblatt |
Tube,Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF1405STRRPBFMOSFET N-CH 55V 131A D2PAK |
3,419 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB160N04S4LH1ATMA1MOSFET N-CH 40V 160A TO263-7 |
2,194 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2.2V @ 110µA | 190 nC @ 10 V | +20V, -16V | 14950 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AOB15S65LMOSFET N-CH 650V 15A TO263 |
2,716 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2 nC @ 10 V | ±30V | 841 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHF540STRL-GE3MOSFET N-CH 100V 28A D2PAK |
2,997 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SI4838DY-T1-GE3MOSFET N-CH 12V 17A 8SO |
2,838 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 17A (Ta) | 2.5V, 4.5V | 3mOhm @ 25A, 4.5V | 600mV @ 250µA (Min) | 60 nC @ 4.5 V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHP18N60E-GE3MOSFET N-CH 600V 18A TO220AB |
3,196 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UF4C120070K3S1200V/70MOHM, SIC, FAST CASCODE |
585 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 27.5A (Tc) | - | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | |
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NVH4L040N65S3FMOSFET N-CH 650V 65A TO247-4 |
445 | - |
|
![]() Datenblatt |
Tube | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | - | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 160 nC @ 10 V | ±30V | 5665 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTE2920MOSFET N-CHANNEL 60V 70A TO3P |
363 | - |
|
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 10V | 14mOhm @ 54A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH70N65X3MOSFET 70A 650V X3 TO247 |
351 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 44mOhm @ 35A, 10V | 5.2V @ 4mA | 66 nC @ 10 V | ±20V | 4600 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDA2712MOSFET N-CH 250V 64A TO3PN |
2,332 | - |
|
![]() Datenblatt |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 34mOhm @ 40A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 10175 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UF4C120070K4S1200V/70MOHM, SIC, FAST CASCODE |
240 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 27.5A (Tc) | - | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 217W (Tc) | -55°C ~ 175°C (TJ) | |
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NTE2393MOSFET N-CHANNEL 500V 10A TO3P |
108 | - |
|
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 670mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | - | - | 125W (Tc) | 150°C (TJ) | Through Hole |
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TP65H050G4WS650 V 34 A GAN FET |
218 | - |
|
![]() Datenblatt |
Tube | SuperGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | 10V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTH4L060N065SC1SIC MOS TO247-4L 650V |
450 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |