Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
131 | - |
|
![]() Datenblatt |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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TW027N65C,S1FG3 650V SIC-MOSFET TO-247 27MOH |
180 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 58A (Tc) | 18V | 37mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | Through Hole |
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IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
200 | - |
|
![]() Datenblatt |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STP9NK65ZFPMOSFET N-CH 650V 6.4A TO220FP |
3,081 | - |
|
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.4A (Tc) | 10V | 1.2Ohm @ 3.2A, 10V | 4.5V @ 100µA | 41 nC @ 10 V | ±30V | 1145 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STP15NK50ZMOSFET N-CH 500V 14A TO220AB |
3,469 | - |
|
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 4.5V @ 100µA | 106 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 160W (Tc) | -50°C ~ 150°C (TJ) | Through Hole |
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2SJ673-AZMOSFET P-CH 60V 36A TO220 |
3,757 | - |
|
![]() Datenblatt |
Bulk | - | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Tc) | 4V, 10V | 20mOhm @ 18A, 10V | - | 87 nC @ 10 V | ±20V | 4600 pF @ 10 V | - | 2W (Ta), 32W (Tc) | 150°C (TJ) | Through Hole |
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IPI65R380C6XKSA1MOSFET N-CH 650V 10.6A TO262-3 |
2,378 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMYS2D2N06CLTWGMOSFET N-CH 60V 31A/185A LFPAK4 |
2,618 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 31A (Ta), 185A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 180µA | 69 nC @ 10 V | ±20V | 4850 pF @ 25 V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPA65R380C6XKSA1MOSFET N-CH 650V 10.6A TO220 |
3,956 | - |
|
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB80P03P405ATMA2MOSFET_(20V 40V) PG-TO263-3 |
3,925 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHH11N60E-T1-GE3MOSFET N-CH 600V 11A PPAK 8 X 8 |
3,760 | - |
|
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 339mOhm @ 5.5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 1076 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI7434DP-T1-E3MOSFET N-CH 250V 2.3A PPAK SO-8 |
3,021 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.3A (Ta) | 6V, 10V | 155mOhm @ 3.8A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI4442DY-T1-GE3MOSFET N-CH 30V 15A 8SO |
3,829 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.5V, 10V | 4.5mOhm @ 22A, 10V | 1.5V @ 250µA | 50 nC @ 4.5 V | ±12V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SPB80N06S08ATMA1MOSFET N-CH 55V 80A TO263-3 |
2,079 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | SIPMOS® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 240µA | 187 nC @ 10 V | ±20V | 3660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB60R280CFD7ATMA1MOSFET N-CH 650V 9A TO263-3-2 |
2,909 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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DMNH6010SCTBQ-13MOSFET BVDSS: 41V~60V TO263 T&R |
2,309 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 133A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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DMN6010SCTBQ-13MOSFET BVDSS: 41V~60V TO263 T&R |
2,819 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 128A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2692 pF @ 25 V | - | 5W (Ta), 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRFN8405TRMOSFET N-CH 40V 95A PQFN |
3,166 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 2mOhm @ 50A, 10V | 3.9V @ 100µA | 117 nC @ 10 V | ±20V | 5142 pF @ 25 V | - | 3.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SQP120N06-6M7_GE3MOSFET N-CH 60V TO220AB |
3,375 | - |
|
Tube | - | Last Time Buy | - | - | - | 119A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | |
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SI7374DP-T1-E3MOSFET N-CH 30V 24A PPAK SO-8 |
3,377 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |