Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF2L4GHA0G

SF2L4GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,431 -
SF2L4GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF2L6G A0G

SF2L6G A0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

2,515 -
SF2L6G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF2L6GHA0G

SF2L6GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,904 -
SF2L6GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF2L8G A0G

SF2L8G A0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3,550 -
SF2L8G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF2L8GHA0G

SF2L8GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,320 -
SF2L8GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF31G A0G

SF31G A0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

2,125 -
SF31G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF31GHA0G

SF31GHA0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3,501 -
SF31GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF32G A0G

SF32G A0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3,387 -
SF32G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF32GHA0G

SF32GHA0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,853 -
SF32GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF33G A0G

SF33G A0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

3,730 -
SF33G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF33GHA0G

SF33GHA0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

3,183 -
SF33GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF34GHA0G

SF34GHA0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,916 -
SF34GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF35G A0G

SF35G A0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation

2,746 -
SF35G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SF35GHA0G

SF35GHA0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation

3,943 -
SF35GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SF36GHA0G

SF36GHA0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

2,198 -
SF36GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SF37G A0G

SF37G A0G

DIODE GEN PURP 500V 3A DO201AD

Taiwan Semiconductor Corporation

2,271 -
SF37G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SF37GHA0G

SF37GHA0G

DIODE GEN PURP 500V 3A DO201AD

Taiwan Semiconductor Corporation

3,368 -
SF37GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SF38GHA0G

SF38GHA0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

3,563 -
SF38GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SF41G A0G

SF41G A0G

DIODE GEN PURP 50V 4A DO201AD

Taiwan Semiconductor Corporation

3,374 -
SF41G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 1 V @ 4 A
SF41GHA0G

SF41GHA0G

DIODE GEN PURP 50V 4A DO201AD

Taiwan Semiconductor Corporation

2,049 -
SF41GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 4A -55°C ~ 150°C 1 V @ 4 A
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