Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR4L40 A0G

MUR4L40 A0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

3,697 -
MUR4L40 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L40HA0G

MUR4L40HA0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

2,689 -
MUR4L40HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L60 A0G

MUR4L60 A0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

3,821 -
MUR4L60 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
MUR4L60HA0G

MUR4L60HA0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2,404 -
MUR4L60HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
P2500M A0G

P2500M A0G

DIODE GEN PURP 1000V 25A P2500

Taiwan Semiconductor Corporation

3,288 -
P2500M A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
P2500MHA0G

P2500MHA0G

DIODE GEN PURP 25A P2500

Taiwan Semiconductor Corporation

2,829 -
P2500MHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1000 V - 25A -50°C ~ 175°C 870 mV @ 5 A
SF21G A0G

SF21G A0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

2,160 -
SF21G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF21GHA0G

SF21GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3,575 -
SF21GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF22G A0G

SF22G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

2,491 -
SF22G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF22GHA0G

SF22GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3,159 -
SF22GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF23G A0G

SF23G A0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

3,607 -
SF23G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF23GHA0G

SF23GHA0G

DIODE GEN PURP 150V 2A DO204AC

Taiwan Semiconductor Corporation

2,091 -
SF23GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF24GHA0G

SF24GHA0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

3,262 -
SF24GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
SF25G A0G

SF25G A0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

3,162 -
SF25G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF25GHA0G

SF25GHA0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

2,725 -
SF25GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF26GHA0G

SF26GHA0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,307 -
SF26GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SF27G A0G

SF27G A0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2,315 -
SF27G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF27GHA0G

SF27GHA0G

DIODE GEN PURP 500V 2A DO204AC

Taiwan Semiconductor Corporation

2,218 -
SF27GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF28GHA0G

SF28GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

3,306 -
SF28GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SF2L4G A0G

SF2L4G A0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

2,852 -
SF2L4G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 35 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
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