Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HER155G A0G

HER155G A0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation

2,156 -
HER155G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HER156G A0G

HER156G A0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

2,142 -
HER156G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HER157G A0G

HER157G A0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

3,288 -
HER157G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HER158G A0G

HER158G A0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

3,208 -
HER158G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HER201G A0G

HER201G A0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3,347 -
HER201G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1 V @ 2 A
HER202G A0G

HER202G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

2,733 -
HER202G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1 V @ 2 A
HER204G A0G

HER204G A0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

3,807 -
HER204G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1 V @ 2 A
HER205G A0G

HER205G A0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

3,741 -
HER205G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
HER206G A0G

HER206G A0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,810 -
HER206G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
HER207G A0G

HER207G A0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

3,721 -
HER207G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.7 V @ 2 A
HER301G A0G

HER301G A0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3,411 -
HER301G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
HER302G A0G

HER302G A0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3,312 -
HER302G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1 V @ 3 A
HER303G A0G

HER303G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,225 -
HER303G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
HER304G A0G

HER304G A0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation

2,462 -
HER304G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1 V @ 3 A
HER306G A0G

HER306G A0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2,766 -
HER306G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
HER307G A0G

HER307G A0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2,391 -
HER307G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
HER601G A0G

HER601G A0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

2,526 -
HER601G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1 V @ 6 A
HER602G A0G

HER602G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

2,486 -
HER602G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1 V @ 6 A
HER603G A0G

HER603G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

2,498 -
HER603G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
HER604G A0G

HER604G A0G

DIODE GEN PURP 300V 6A R-6

Taiwan Semiconductor Corporation

3,089 -
HER604G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 6A -55°C ~ 150°C 1 V @ 6 A
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HEIM

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PRODUKT

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TELEFON

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