Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAS7002LE6327XTMA1DIODE SCHOTTKY 70V 70MA TSLP-2 |
3,509 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | ||
BAT54E6327HTSA1DIODE SCHOTTKY 30V 200MA SOT23-3 |
123,230 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | ||
IDH20G120C5XKSA1DIODE SCHOTTKY 1.2KV 56A TO220-2 |
3,840 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1050pF @ 1V, 1MHz | 0 ns | 123 µA @ 1200 V | 1200 V | 56A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | |
IDW30G65C5XKSA1DIODE SCHOTTKY 650V 30A TO247-3 |
2,687 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A | |
IDWD30G120C5XKSA1SIC SCHOTTKY 1200V 30A TO247-2 |
3,311 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1980pF @ 1V, 1MHz | 0 ns | 248 µA @ 1200 V | 1200 V | 87A (DC) | -55°C ~ 175°C | 1.65 V @ 30 A | |
IDW40G65C5XKSA1DIODE SCHOTTKY 650V 40A TO247-3 |
3,663 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1140pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 40A (DC) | -55°C ~ 175°C | 1.7 V @ 40 A | |
IDP08E65D1XKSA1DIODE GEN PURP 650V 8A TO220-2 |
726 | - |
|
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 1.7 V @ 8 A | ||
BAT6402WH6327XTSA1DIODE SCHOTTKY 40V 120MA SCD80-2 |
3,632 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 6pF @ 1V, 1MHz | 5 ns | 2 µA @ 30 V | 40 V | 120mA | 150°C (Max) | 750 mV @ 100 mA | ||
HFA15PB60PBFDIODE GEN PURP 600V 15A TO247AC |
3,580 | - |
|
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.7 V @ 15 A | |
HFA15TB60PBFDIODE GEN PURP 600V 15A TO220AC |
2,526 | - |
|
Datasheet |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.7 V @ 15 A | |
IDH05G65C5XKSA1DIODE SCHOTTKY 650V 5A TO220-2 |
3,410 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 160pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A | |
IDW40G65C5FKSA1DIODE SCHOTTKY 650V 40A TO247-3 |
3,702 | - |
|
Datasheet |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 1140pF @ 1V, 1MHz | 0 ns | 1.4 mA @ 650 V | 650 V | 40A (DC) | -55°C ~ 175°C | 1.7 V @ 40 A | |
IDH20G65C5XKSA1DIODE SCHOTTKY 650V 20A TO220-2 |
3,881 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 700 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
IDW10G65C5FKSA1DIODE SCHOTTKY 650V 10A TO247-3 |
2,557 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 400 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A | |
IDH06G65C5XKSA1DIODE SCHOTTKY 650V 6A TO220-2 |
3,738 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 210 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | |
IDH04G65C5XKSA1DIODE SCHOTTKY 650V 4A TO220-2 |
3,741 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A | |
IDW16G65C5FKSA1DIODE SCHOTTKY 650V 16A TO247-3 |
2,727 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 600 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A | |
IDW20G65C5FKSA1DIODE SCHOTTKY 650V 20A TO247-3 |
3,265 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 700 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
IDH16G65C5XKSA1DIODE SCHOTTKY 650V 16A TO220-2 |
3,297 | - |
|
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 550 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A | |
BAT5403WE6327HTSA1DIODE SCHOT 30V 200MA SOD323-2 |
8,994 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA |