Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
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结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IDV30E60C

IDV30E60C

DIODE GEN PURP 600V 21A TO22FP

Infineon Technologies

2,328 -
IDV30E60C

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 130 ns 40 µA @ 600 V 600 V 21A -55°C ~ 175°C 2.05 V @ 30 A
BAS116E6327HTSA1

BAS116E6327HTSA1

DIODE GEN PURP 80V 250MA SOT23-3

Infineon Technologies

1,367 -
BAS116E6327HTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Not For New Designs Surface Mount 2pF @ 0V, 1MHz 1.5 µs 5 nA @ 75 V 80 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
IDY10S120XKSA1

IDY10S120XKSA1

DIODE SCHOTTKY 1.2KV 5A TO247HC

Infineon Technologies

3,250 -
IDY10S120XKSA1

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 250pF @ 1V, 1MHz 0 ns 120 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 175°C 1.8 V @ 10 A
IDY15S120XKSA1

IDY15S120XKSA1

DIODE SCHOTTKY 1.2KV 7.5A TO247

Infineon Technologies

2,082 -
IDY15S120XKSA1

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 375pF @ 1V, 1MHz 0 ns 180 µA @ 1200 V 1200 V 7.5A (DC) -55°C ~ 150°C 1.8 V @ 10 A
BAS1602VH6327XTSA1

BAS1602VH6327XTSA1

DIODE GEN PURP 80V 200MA SC79-2

Infineon Technologies

2,090 -
BAS1602VH6327XTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Not For New Designs Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 80 V 200mA (DC) 150°C (Max) 1.25 V @ 150 mA
BAS3010A03WE6327HTSA1

BAS3010A03WE6327HTSA1

DIODE SCHOTTKY 30V 1A SOD323-2

Infineon Technologies

2,485 -
BAS3010A03WE6327HTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 35pF @ 5V, 1MHz - 200 µA @ 30 V 30 V 1A -65°C ~ 125°C 470 mV @ 1 A
BAT60BE6327HTSA1

BAT60BE6327HTSA1

DIODE SCHOTTKY 10V 3A SOD323-2

Infineon Technologies

3,508 -
BAT60BE6327HTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 30pF @ 5V, 1MHz - 25 µA @ 8 V 10 V 3A (DC) 150°C (Max) 600 mV @ 1 A
BAS140WE6327HTSA1

BAS140WE6327HTSA1

DIODE SCHOTTKY 40V 120MA SOD323

Infineon Technologies

2,028 -
BAS140WE6327HTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 0V, 1MHz 100 ps 1 µA @ 30 V 40 V 120mA (DC) -55°C ~ 150°C 1 V @ 40 mA
IDP45E60XKSA1

IDP45E60XKSA1

DIODE GEN PURP 600V 71A TO220-2

Infineon Technologies

277 -
IDP45E60XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Through Hole - 140 ns 50 µA @ 600 V 600 V 71A (DC) -55°C ~ 175°C 2 V @ 45 A
BAS1602WH6327XTSA1

BAS1602WH6327XTSA1

DIODE GEN PURP 80V 200MA SCD80-2

Infineon Technologies

3,137 -
BAS1602WH6327XTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 80 V 200mA (DC) 150°C (Max) 1.25 V @ 150 mA
BAS7002WH6327XTSA1

BAS7002WH6327XTSA1

DIODE SCHOTTKY 70V 70MA SCD80-2

Infineon Technologies

2,033 -
BAS7002WH6327XTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 2pF @ 0V, 1MHz 100 ps 100 nA @ 50 V 70 V 70mA (DC) -55°C ~ 125°C 1 V @ 15 mA
IDD04S60CBUMA1

IDD04S60CBUMA1

DIODE SCHOTTKY 600V 5.6A TO252-3

Infineon Technologies

1,406 -
IDD04S60CBUMA1

Datasheet

Tape & Reel (TR),Cut Tape (CT),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Surface Mount 130pF @ 1V, 1MHz 0 ns 50 µA @ 600 V 600 V 5.6A -55°C ~ 175°C 1.9 V @ 4 A
IDFW40E65D1EXKSA1

IDFW40E65D1EXKSA1

DIODE GP 650V 42A TO247-3-AI

Infineon Technologies

3,122 -
IDFW40E65D1EXKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 76 ns 40 µA @ 650 V 650 V 42A (DC) -40°C ~ 175°C 2.1 V @ 40 A
IDV30E65D2XKSA1

IDV30E65D2XKSA1

DIODE GEN PURP 650V 30A TO220-2

Infineon Technologies

3,915 -
IDV30E65D2XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 42 ns 40 µA @ 650 V 650 V 30A (DC) -40°C ~ 175°C 2.2 V @ 30 A
IDP30E120XKSA1

IDP30E120XKSA1

DIODE GEN PURP 1.2KV 50A TO220-2

Infineon Technologies

2,881 -
IDP30E120XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 243 ns 100 µA @ 1200 V 1200 V 50A (DC) -55°C ~ 150°C 2.15 V @ 30 A
IDW75D65D1XKSA1

IDW75D65D1XKSA1

DIODE GEN PURP 650V 150A TO247-3

Infineon Technologies

2,546 -
IDW75D65D1XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 108 ns 40 µA @ 650 V 650 V 150A (DC) -40°C ~ 175°C 1.7 V @ 75 A
IDH16G65C5XKSA2

IDH16G65C5XKSA2

DIODE SCHOTKY 650V 16A TO220-2-1

Infineon Technologies

3,484 -
IDH16G65C5XKSA2

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 470pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 16A (DC) -55°C ~ 175°C 1.7 V @ 16 A
IDH16G65C6XKSA1

IDH16G65C6XKSA1

DIODE SCHOTTKY 650V 34A TO220-2

Infineon Technologies

3,028 -
IDH16G65C6XKSA1

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 783pF @ 1V, 1MHz 0 ns 53 µA @ 420 V 650 V 34A (DC) -55°C ~ 175°C 1.35 V @ 16 A
IDH20G65C6XKSA1

IDH20G65C6XKSA1

DIODE SCHOTTKY 650V 41A TO220-2

Infineon Technologies

2,891 -
IDH20G65C6XKSA1

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 970pF @ 1V, 1MHz 0 ns 67 µA @ 420 V 650 V 41A (DC) -55°C ~ 175°C 1.35 V @ 20 A
IDW20G65C5XKSA1

IDW20G65C5XKSA1

DIODE SCHOTTKY 650V 20A TO247-3

Infineon Technologies

2,691 -
IDW20G65C5XKSA1

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 590pF @ 1V, 1MHz 0 ns 210 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
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