Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
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Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SIDC04D60F6X1SA4

SIDC04D60F6X1SA4

DIODE SWITCHING 600V WAFER

Infineon Technologies

2,597 -
SIDC04D60F6X1SA4

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 9A (DC) -40°C ~ 175°C 1.6 V @ 9 A
SIDC07D60F6X1SA1

SIDC07D60F6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2,361 -
SIDC07D60F6X1SA1

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 22.5A (DC) -40°C ~ 175°C 1.6 V @ 22.5 A
SIDC03D60C8X1SA2

SIDC03D60C8X1SA2

DIODE SWITCHING 600V 10A WAFER

Infineon Technologies

3,490 -
SIDC03D60C8X1SA2

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -40°C ~ 175°C 1.95 V @ 10 A
SIDC14D60F6X1SA1

SIDC14D60F6X1SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

3,053 -
SIDC14D60F6X1SA1

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 45A (DC) -40°C ~ 175°C 1.6 V @ 45 A
SIDC03D60C8F1SA1

SIDC03D60C8F1SA1

DIODE SWITCHING 600V 10A WAFER

Infineon Technologies

2,594 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 10A (DC) -40°C ~ 175°C 1.95 V @ 10 A
SIDC14D60C8X1SA2

SIDC14D60C8X1SA2

DIODE GEN PURP 600V 50A WAFER

Infineon Technologies

3,817 -
SIDC14D60C8X1SA2

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 50A (DC) -40°C ~ 175°C 1.9 V @ 50 A
AIDK08S65C5ATMA1

AIDK08S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

847 -
Tape & Reel (TR),Cut Tape (CT) RoHS - - Active - - - - - - - -
BAT1502ELE6327XTMA1

BAT1502ELE6327XTMA1

DIODE SCHOT 4V 110MA TSLP-2-19

Infineon Technologies

3,694 -
BAT1502ELE6327XTMA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 350pF @ 0V, 1MHz - 5 µA @ 1 V 4 V 110mA (DC) -55°C ~ 150°C 410 mV @ 10 mA
IDH12G65C6XKSA1

IDH12G65C6XKSA1

DIODE SCHOTTKY 650V 27A TO220-2

Infineon Technologies

3,371 -
IDH12G65C6XKSA1

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 594pF @ 1V, 1MHz 0 ns 40 µA @ 420 V 650 V 27A (DC) -55°C ~ 175°C 1.35 V @ 12 A
D170S25BS1XPSA1

D170S25BS1XPSA1

DIODE GEN PURP BG-DSW271-1

Infineon Technologies

2,465 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - 4 µs 5 mA @ 2500 V 2500 V 255A 140°C (Max) 2.3 V @ 800 A
D56S45CS02PRXPSA1

D56S45CS02PRXPSA1

DIODE GEN PURP BG-DSW272-1

Infineon Technologies

3,527 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Stud Mount - 3.3 µs 5 mA @ 4500 V 4500 V 102A 125°C (Max) 4.5 V @ 320 A
D690S26TS01XPSA1

D690S26TS01XPSA1

DIODE GEN PURP BG-D5726K-1

Infineon Technologies

2,239 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - 9 µs 25 mA @ 2600 V 2600 V 690A 150°C (Max) 2.7 V @ 3000 A
D841S45TS01XDLA1

D841S45TS01XDLA1

DIODE GEN PURP BG-D7514-1

Infineon Technologies

2,617 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Chassis Mount - - 140 mA @ 4500 V 4500 V 1080A 125°C (Max) 3.5 V @ 2500 A
BAS16WE6327HTSA1

BAS16WE6327HTSA1

DIODE GEN PURP 80V 250MA SOT323

Infineon Technologies

2,622 -
BAS16WE6327HTSA1

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 80 V 250mA (DC) 150°C (Max) 1.25 V @ 150 mA
IDV15E65D2XKSA1

IDV15E65D2XKSA1

DIODE GEN PURP 650V 15A TO220-2

Infineon Technologies

490 -
IDV15E65D2XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 47 ns 40 µA @ 650 V 650 V 15A -40°C ~ 175°C 2.2 V @ 15 A
IDH02G65C5XKSA2

IDH02G65C5XKSA2

DIODE SCHOTTKY 650V 2A TO220-2

Infineon Technologies

415 -
IDH02G65C5XKSA2

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 70pF @ 1V, 1MHz 0 ns - 650 V 2A (DC) -55°C ~ 175°C 1.7 V @ 2 A
IDH03G65C5XKSA2

IDH03G65C5XKSA2

DIODE SCHOTTKY 650V 3A TO220-2-1

Infineon Technologies

169 -
IDH03G65C5XKSA2

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 100pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 3A (DC) -55°C ~ 175°C 1.7 V @ 3 A
IDB12E120ATMA1

IDB12E120ATMA1

DIODE GEN PURP 1.2KV 28A TO263-3

Infineon Technologies

7,247 -
IDB12E120ATMA1

Datasheet

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 150 ns 100 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 150°C 2.15 V @ 12 A
IDB23E60ATMA1

IDB23E60ATMA1

DIODE GP 600V 41A TO263-3-2

Infineon Technologies

3,000 -
IDB23E60ATMA1

Datasheet

Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 120 ns 50 µA @ 600 V 600 V 41A (DC) -55°C ~ 175°C 2 V @ 23 A
IDP12E120XKSA1

IDP12E120XKSA1

DIODE GEN PURP 1.2KV 28A TO220-2

Infineon Technologies

246 -
IDP12E120XKSA1

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 100 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 150°C 2.15 V @ 12 A
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