Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
A1N4148WT-HF

A1N4148WT-HF

AUTOMOTIVE DIODE SWITCHING 100V

Comchip Technology

3,234 -
A1N4148WT-HF

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 4 ns 1 µA @ 75 V 75 V 125mA -65°C ~ 150°C 1.25 V @ 150 mA
RB451UMTL

RB451UMTL

RB451UM IS SCHOTTKY BARRIER DIOD

Rohm Semiconductor

3,097 -
RB451UMTL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 6pF @ 10V, 1MHz - 90 µA @ 40 V 40 V 100mA 125°C (Max) 450 mV @ 100 mA
BA157GHR0G

BA157GHR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,423 -
BA157GHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
ES1JL RVG

ES1JL RVG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

3,414 -
ES1JL RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BA158GHR0G

BA158GHR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,801 -
BA158GHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SE20PJ-M3/84A

SE20PJ-M3/84A

DIODE GEN PURP 600V 1.6A DO220AA

Vishay General Semiconductor - Diodes Division

2,787 -
SE20PJ-M3/84A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 13pF @ 4V, 1MHz 1.2 µs 5 µA @ 600 V 600 V 1.6A -55°C ~ 175°C 1.05 V @ 2 A
S1G M2G

S1G M2G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation

3,762 -
S1G M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SS1FL3-M3/H

SS1FL3-M3/H

DIODE SCHOTTKY 30V 1A DO-219AB

Vishay General Semiconductor - Diodes Division

2,408 -
SS1FL3-M3/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 1A -55°C ~ 150°C 480 mV @ 1 A
S1J M2G

S1J M2G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

2,754 -
S1J M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SE30PAJ-M3/I

SE30PAJ-M3/I

DIODE GEN PURP 600V 1.4A DO221BC

Vishay General Semiconductor - Diodes Division

2,546 -
SE30PAJ-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 1.4A (DC) -55°C ~ 175°C 910 mV @ 1.5 A
S1K M2G

S1K M2G

DIODE GEN PURP 800V 1A DO214AC

Taiwan Semiconductor Corporation

2,467 -
S1K M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
BYM10-1000-E3/97

BYM10-1000-E3/97

DIODE GEN PURP 1KV 1A DO213AB

Vishay General Semiconductor - Diodes Division

2,696 -
BYM10-1000-E3/97

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.2 V @ 1 A
1N4448HWS-13-F

1N4448HWS-13-F

DIODE GEN PURP 80V 250MA SOD323

Diodes Incorporated

2,082 -
1N4448HWS-13-F

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 3.5pF @ 0V, 1MHz 4 ns 100 nA @ 80 V 80 V 250mA -65°C ~ 150°C 1.25 V @ 150 mA
RS1JLWHRVG

RS1JLWHRVG

DIODE GEN PURP 600V 1A SOD123W

Taiwan Semiconductor Corporation

2,437 -
RS1JLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.3 V @ 1 A
BAS40-00-HE3-18

BAS40-00-HE3-18

DIODE SCHOTTKY 40V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2,321 -
BAS40-00-HE3-18

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 0V, 1MHz 5 ns 100 nA @ 30 V 40 V 200mA 125°C (Max) 1 V @ 40 mA
RS1MLWHRVG

RS1MLWHRVG

DIODE GEN PURP 1KV 1A SOD123W

Taiwan Semiconductor Corporation

3,357 -
RS1MLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 250 ns 5 µA @ 1000 V 1000 V 1A -55°C ~ 175°C 1.3 V @ 1 A
BAT42WS-HE3-18

BAT42WS-HE3-18

DIODE SCHOTTKY 30V 200MA SOD323

Vishay General Semiconductor - Diodes Division

3,823 -
BAT42WS-HE3-18

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 7pF @ 1V, 1MHz 5 ns 500 nA @ 25 V 30 V 200mA (DC) 125°C (Max) 650 mV @ 50 mA
JANTXV1N5617/TR

JANTXV1N5617/TR

RECTIFIER UFR,FRR

Microchip Technology

3,998 -
Tape & Reel (TR) Military, MIL-PRF-19500/427 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 12V, 1MHz 150 ns 500 nA @ 400 V 400 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-85HFLR10S02

VS-85HFLR10S02

DIODE GEN PURP 100V 85A DO203AB

Vishay General Semiconductor - Diodes Division

2,629 -
VS-85HFLR10S02

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 100 µA @ 100 V 100 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
JANTX1N5554US/TR

JANTX1N5554US/TR

STD RECTIFIER

Microchip Technology

3,152 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs - - 3A -65°C ~ 175°C 1.3 V @ 9 A
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