Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYG10D-E3/TR3

BYG10D-E3/TR3

DIODE AVALANCHE 200V 1.5A

Vishay General Semiconductor - Diodes Division

2,385 -
BYG10D-E3/TR3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
IDW15E65D2FKSA1

IDW15E65D2FKSA1

DIODE GEN PURP 650V 30A TO247-3

Rochester Electronics, LLC

15,600 -
IDW15E65D2FKSA1

Datenblatt

Bulk,Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 47 ns 40 µA @ 650 V 650 V 30A -40°C ~ 175°C 2.3 V @ 15 A
SF18G-TP

SF18G-TP

DIODE GPP SUPER FAST 1A DO-41

Micro Commercial Co

2,801 -
SF18G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns - 600 V 1A -55°C ~ 150°C -
BYG10M-E3/TR3

BYG10M-E3/TR3

DIODE AVALANCHE 1KV 1.5A

Vishay General Semiconductor - Diodes Division

2,849 -
BYG10M-E3/TR3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 1000 V 1000 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
1N5309UR-1/TR

1N5309UR-1/TR

CURRENT REGULATOR

Microchip Technology

3,479 -
1N5309UR-1/TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 3.3A -65°C ~ 175°C 2.25 V @ 2.16 A
RB520VM-30FHTE-17

RB520VM-30FHTE-17

RB520VM-30FH IS LOW V F

Rohm Semiconductor

3,840 -
RB520VM-30FHTE-17

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Not For New Designs Surface Mount - - 1 µA @ 10 V 30 V 200mA 150°C (Max) 580 mV @ 200 mA
ES1C-E3/61T

ES1C-E3/61T

DIODE GEN PURP 150V 1A DO214AC

Vishay General Semiconductor - Diodes Division

3,582 -
ES1C-E3/61T

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 920 mV @ 1 A
1N4002E-E3/54

1N4002E-E3/54

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,655 -
1N4002E-E3/54

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SL13-E3/5AT

SL13-E3/5AT

DIODE SCHOTTKY 30V 1.5A DO214AC

Vishay General Semiconductor - Diodes Division

3,819 -
SL13-E3/5AT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 30 V 30 V 1.5A -55°C ~ 125°C 445 mV @ 1 A
1N4003E-E3/54

1N4003E-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,753 -
1N4003E-E3/54

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SS16LW RVG

SS16LW RVG

DIODE SCHOTTKY 60V 1A SOD123W

Taiwan Semiconductor Corporation

2,803 -
SS16LW RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
1N4004E-E3/54

1N4004E-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,756 -
1N4004E-E3/54

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.1 V @ 1 A
1SS307(TE85L,F)

1SS307(TE85L,F)

DIODE GEN PURP 30V 100MA SMINI

Toshiba Semiconductor and Storage

3,369 -
1SS307(TE85L,F)

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 6pF @ 0V, 1MHz - 10 µA @ 30 V 30 V 100mA 125°C (Max) 1.3 V @ 100 mA
1N4001E-E3/54

1N4001E-E3/54

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,580 -
1N4001E-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -50°C ~ 150°C 1.1 V @ 1 A
SS1FH6HM3/H

SS1FH6HM3/H

DIODE SCHOTTKY 60V 1A DO219AB

Vishay General Semiconductor - Diodes Division

2,790 -
SS1FH6HM3/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 4V, 1MHz - 3 µA @ 60 V 60 V 1A -55°C ~ 175°C 700 mV @ 1 A
1N4005E-E3/54

1N4005E-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,209 -
1N4005E-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
RB420DT146

RB420DT146

Original and genuine

Rohm Semiconductor

8,500 -
Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 6pF @ 10V, 1MHz - 1 µA @ 10 V 40 V 100mA 125°C (Max) 450 mV @ 10 mA
1N5817 BK PBFREE

1N5817 BK PBFREE

DIODE SCHOTTKY 20V 1A DO41

Central Semiconductor Corp

2,678 -
1N5817 BK PBFREE

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 20 V 20 V 1A -65°C ~ 150°C 450 mV @ 1 A
RB168MM-30TFTR

RB168MM-30TFTR

RB168MM-30TF IS THE HIGH RELIABI

Rohm Semiconductor

2,779 -
RB168MM-30TFTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 nA @ 30 V 30 V 1A 150°C (Max) 690 mV @ 1 A
1N5817 TR PBFREE

1N5817 TR PBFREE

DIODE SCHOTTKY 20V 1A DO41

Central Semiconductor Corp

2,763 -
1N5817 TR PBFREE

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 20 V 20 V 1A -65°C ~ 150°C 450 mV @ 1 A
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