Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
ES3F V7G

ES3F V7G

DIODE GEN PURP 300V 3A DO214AB

Taiwan Semiconductor Corporation

2,511 -
ES3F V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C -
SDT8A120P5Q-13D

SDT8A120P5Q-13D

DIODE SCHOTTKY 120V 8A POWERDI5

Diodes Incorporated

3,832 -
SDT8A120P5Q-13D

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 300 µA @ 120 V 120 V 8A -55°C ~ 150°C 840 mV @ 8 A
JANTXV1N6778

JANTXV1N6778

RECTIFIER

Microchip Technology

3,629 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 300pF @ 5V, 1MHz 60 ns 10 µA @ 320 V 400 V 15A 150°C (Max) 1.6 V @ 15 A
UF4002HA0G

UF4002HA0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,648 -
UF4002HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
2A05GHA0G

2A05GHA0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,353 -
2A05GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1 V @ 2 A
NXPSC06650BJ

NXPSC06650BJ

DIODE SCHOTTKY 650V 6A D2PAK

WeEn Semiconductors

3,819 -
NXPSC06650BJ

Datenblatt

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 190pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 6A 175°C (Max) 1.7 V @ 6 A
ESH3B V7G

ESH3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,039 -
ESH3B V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
JANTXV1N6779

JANTXV1N6779

RECTIFIER

Microchip Technology

2,737 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 300pF @ 5V, 1MHz 60 ns 10 µA @ 480 V 600 V 15A 150°C (Max) 1.6 V @ 15 A
UF4003 A0G

UF4003 A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3,567 -
UF4003 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
2A06G A0G

2A06G A0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

3,626 -
2A06G A0G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1 V @ 2 A
NXPSC06650DJ

NXPSC06650DJ

DIODE SCHOTTKY 650V 6A DPAK

WeEn Semiconductors

3,428 -
NXPSC06650DJ

Datenblatt

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 190pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 6A 175°C (Max) 1.7 V @ 6 A
ESH3C V7G

ESH3C V7G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

2,260 -
ESH3C V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C -
JANTXV1N6840U3

JANTXV1N6840U3

SCHOTTKY DIODE

Microchip Technology

3,017 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 35 V 10A -65°C ~ 150°C 880 mV @ 20 A
UF4003HA0G

UF4003HA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,305 -
UF4003HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
2A06GHA0G

2A06GHA0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

2,474 -
2A06GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1 V @ 2 A
NXPSC06650XQ

NXPSC06650XQ

DIODE SCHOTTKY 650V 6A TO220F

WeEn Semiconductors

3,453 -
NXPSC06650XQ

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 190pF @ 1V, 1MHz 0 ns 200 µA @ 650 V 650 V 6A 175°C (Max) 1.7 V @ 6 A
ESH3D V7G

ESH3D V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

3,846 -
ESH3D V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C -
JANTXV1N6841U3

JANTXV1N6841U3

SCHOTTKY DIODE

Microchip Technology

2,868 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 35 V 10A -65°C ~ 150°C 880 mV @ 20 A
UF4004 A0G

UF4004 A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,803 -
UF4004 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
2A07G A0G

2A07G A0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

3,412 -
2A07G A0G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 2A -55°C ~ 150°C 1 V @ 2 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER