Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JANTXV1N6772

JANTXV1N6772

RECTIFIER

Microchip Technology

3,993 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 320 V 400 V 8A (DC) - 1.6 V @ 8 A
UF1K A0G

UF1K A0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

3,802 -
UF1K A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A01GHA0G

2A01GHA0G

DIODE GEN PURP 50V 2A DO204AC

Taiwan Semiconductor Corporation

3,032 -
2A01GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30JT-600PQ

BYV30JT-600PQ

DIODE GEN PURP 600V 30A TO-3P

WeEn Semiconductors

3,752 -
BYV30JT-600PQ

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.8 V @ 30 A
ES3A V7G

ES3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3,664 -
ES3A V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
BAS321/8X

BAS321/8X

DIODE GEN PURP 200V 250MA SOD323

Nexperia USA Inc.

3,066 -
BAS321/8X

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 2pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
JANTXV1N6772R

JANTXV1N6772R

RECTIFIER

Microchip Technology

2,337 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 320 V 400 V 8A (DC) - 1.6 V @ 8 A
UF1KHA0G

UF1KHA0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,489 -
UF1KHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02G A0G

2A02G A0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3,432 -
2A02G A0G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30W-600PQ

BYV30W-600PQ

DIODE GEN PURP 600V 30A TO247-2

WeEn Semiconductors

3,695 -
BYV30W-600PQ

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.55 V @ 30 A
ES3B V6G

ES3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,179 -
ES3B V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
BYC30-1200PQ

BYC30-1200PQ

DIODE GEN PURP 1.2KV 30A TO220AC

WeEn Semiconductors

3,808 -
BYC30-1200PQ

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 250 µA @ 1200 V 1200 V 30A 175°C (Max) 3.3 V @ 30 A
JANTXV1N6773

JANTXV1N6773

RECTIFIER

Microchip Technology

2,502 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 480 V 600 V 8A (DC) - 1.6 V @ 8 A
UF1M A0G

UF1M A0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,089 -
UF1M A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
2A02GHA0G

2A02GHA0G

DIODE GEN PURP 100V 2A DO204AC

Taiwan Semiconductor Corporation

3,939 -
2A02GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYV30X-600PQ

BYV30X-600PQ

DIODE GEN PURP 600V 30A TO220F

WeEn Semiconductors

2,429 -
BYV30X-600PQ

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.55 V @ 30 A
ES3B V7G

ES3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,325 -
ES3B V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
BYC5-1200PQ

BYC5-1200PQ

DIODE GEN PURP 1.2KV 5A TO220AC

WeEn Semiconductors

2,339 -
BYC5-1200PQ

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 36 ns 100 µA @ 1200 V 1200 V 5A 175°C (Max) 3.2 V @ 5 A
JANTXV1N6773R

JANTXV1N6773R

RECTIFIER

Microchip Technology

2,718 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 200pF @ 5V, 1MHz 60 ns 10 µA @ 480 V 600 V 8A (DC) - 1.6 V @ 8 A
UF1MHA0G

UF1MHA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

2,576 -
UF1MHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER