Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BAS316/DG/B4F

BAS316/DG/B4F

DIODE SWITCHING SOD323

Nexperia USA Inc.

3,037 -
BAS316/DG/B4F

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
3A60HA0G

3A60HA0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

3,379 -
3A60HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HER304-TP

HER304-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

3,784 -
HER304-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 80pF @ 4V, 1MHz 50 ns - 300 V 3A -55°C ~ 150°C -
HS5B V6G

HS5B V6G

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

2,782 -
HS5B V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A -55°C ~ 150°C -
JANTXV1N6912UTK2AS

JANTXV1N6912UTK2AS

SCHOTTKY DIODE

Microchip Technology

2,557 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Surface Mount 1000pF @ 5V, 1MHz - 1.2 mA @ 45 V 45 V 25A -65°C ~ 150°C 640 mV @ 25 A
1T2G A1G

1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

2,442 -
1T2G A1G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
BAS316/DG/B4X

BAS316/DG/B4X

DIODE SWITCHING SOD323

Nexperia USA Inc.

2,536 -
BAS316/DG/B4X

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
6A05G A0G

6A05G A0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

3,356 -
6A05G A0G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
HER305-TP

HER305-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

3,172 -
HER305-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 80pF @ 4V, 1MHz 50 ns - 400 V 3A -55°C ~ 150°C -
MUR305S V7G

MUR305S V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3,792 -
MUR305S V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C -
JANTXV1N6940UTK3AS

JANTXV1N6940UTK3AS

SCHOTTKY DIODE

Microchip Technology

3,446 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Surface Mount - - 5 mA @ 15 V 15 V 150A -65°C ~ 175°C 500 mV @ 150 A
1T3G A1G

1T3G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

3,851 -
1T3G A1G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
BAS40/DG/B3R

BAS40/DG/B3R

DIODE SCHOTTKY TO-236AB

Nexperia USA Inc.

2,916 -
BAS40/DG/B3R

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
6A05GHA0G

6A05GHA0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

3,030 -
6A05GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
HER306-TP

HER306-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

2,400 -
HER306-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 50pF @ 4V, 1MHz 75 ns - 600 V 3A -55°C ~ 150°C -
MUR310S V7G

MUR310S V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,909 -
MUR310S V7G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
JANTXV1N6940UTK3CS

JANTXV1N6940UTK3CS

SCHOTTKY DIODE

Microchip Technology

3,345 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Surface Mount - - 5 mA @ 15 V 15 V 150A -65°C ~ 175°C 500 mV @ 150 A
1T4G A1G

1T4G A1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,997 -
1T4G A1G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
BAT46WJ/DG/B3X

BAT46WJ/DG/B3X

DIODE SCHOTTKY TO-236AB

Nexperia USA Inc.

3,952 -
BAT46WJ/DG/B3X

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
6A100G A0G

6A100G A0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

3,768 -
6A100G A0G

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER