Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRLI2910PBFMOSFET N-CH 100V 31A TO220AB FP |
2,563 | - |
|
Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
STP10NK70ZFPMOSFET N-CH 700V 8.6A TO220FP |
3,471 | - |
|
Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.6A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4.5V @ 100µA | 90 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
EPC2001GANFET N-CH 100V 25A DIE OUTLINE |
3,667 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 100 V | 25A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 10 nC @ 5 V | +6V, -5V | 950 pF @ 50 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
EPC2007GANFET N-CH 100V 6A DIE OUTLINE |
3,924 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 100 V | 6A (Ta) | 5V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8 nC @ 5 V | +6V, -5V | 205 pF @ 50 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
EPC2010GANFET N-CH 200V 12A DIE |
2,617 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 200 V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5 nC @ 5 V | +6V, -4V | 540 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
EPC2012GANFET N-CH 200V 3A DIE |
3,312 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 200 V | 3A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8 nC @ 5 V | +6V, -5V | 145 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
EPC2014GANFET N-CH 40V 10A DIE OUTLINE |
2,712 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 40 V | 10A (Ta) | 5V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | +6V, -5V | 325 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
EPC2015GANFET N-CH 40V 33A DIE OUTLINE |
3,621 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 40 V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6 nC @ 5 V | +6V, -5V | 1200 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
BUK764R0-75C,118MOSFET N-CH 75V 100A D2PAK |
3,972 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 142 nC @ 10 V | ±20V | 11659 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
EPC2016GANFET N-CH 100V 11A DIE |
2,997 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 100 V | 11A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2 nC @ 5 V | +6V, -5V | 520 pF @ 50 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
STF38N65M5MOSFET N-CH 650V 30A TO220FP |
3,067 | - |
|
Datenblatt |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±25V | 3000 pF @ 100 V | - | 35W (Tc) | 150°C (TJ) | Through Hole | |
BUK7E2R6-60E,127MOSFET N-CH 60V 120A I2PAK |
2,345 | - |
|
Datenblatt |
Bulk,Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 158 nC @ 10 V | ±20V | 11180 pF @ 25 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
GA08JT17-247TRANS SJT 1700V 8A TO247AB |
2,525 | - |
|
Datenblatt |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole | |
STW24N60M2MOSFET N-CH 600V 18A TO247 |
3,589 | - |
|
Datenblatt |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
2N7002E-T1-E3MOSFET N-CH 60V 240MA SOT23-3 |
2,371 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 4.5V, 10V | 3Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 21 pF @ 5 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
SCH2080KECSICFET N-CH 1200V 40A TO247 |
3,087 | - |
|
Datenblatt |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 1850 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole | |
EPC2018GANFET N-CH 150V 12A DIE |
2,322 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 150 V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5 nC @ 5 V | +6V, -5V | 540 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | |
SCT2160KECSICFET N-CH 1200V 22A TO247 |
2,349 | - |
|
Datenblatt |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole | |
SCT2450KECSICFET N-CH 1200V 10A TO247 |
2,779 | - |
|
Datenblatt |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27 nC @ 18 V | +22V, -6V | 463 pF @ 800 V | - | 85W (Tc) | 175°C (TJ) | Through Hole | |
SCT2120AFCSICFET N-CH 650V 29A TO220AB |
2,846 | - |
|
Datenblatt |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | 18V | 156mOhm @ 10A, 18V | 4V @ 3.3mA | 61 nC @ 18 V | +22V, -6V | 1200 pF @ 500 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |