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Transistoren von FETs, MOSFETs von Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AS3D020120C1200V,20A SILICON CARBIDE SCHOTT |
2,238 | - |
|
Datenblatt |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DIT195N08MOSFET, TO-220AB, 85V, 195A, N |
2,549 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 85 V | 195A (Tc) | 10V | 4.95mOhm @ 40A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 16880 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | |
|
|
AS3D030065C650V,30A SILICON CARBIDE SCHOTTK |
2,031 | - |
|
Datenblatt |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUIRF7739L2TRMOSFET N-CH 40V 46A/270A DIRECT |
2,507 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 270A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 11880 pF @ 25 V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
P3M12160K3SICFET N-CH 1200V 19A TO-247-3 |
2,066 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | - | +21V, -8V | - | - | 110W | -55°C ~ 175°C (TJ) | Through Hole |
|
P3M06120T3SICFET N-CH 650V 29A TO-220-3 |
2,658 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA (Typ) | - | +20V, -8V | - | - | 153W | -55°C ~ 175°C (TJ) | Through Hole |
|
|
AS3D030120P21200V,30A SILICON CARBIDE SCHOTT |
2,444 | - |
|
Datenblatt |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
P3M06060G7SICFET N-CH 650V 44A TO-263-7 |
2,542 | - |
|
Datenblatt |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 44A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 159W | -55°C ~ 175°C (TJ) | Surface Mount |
|
P3M06060L8SICFET N-CH 650V 40A TOLL |
2,700 | - |
|
Datenblatt |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Surface Mount |
|
C3M0075120J-TRSICFET N-CH 1200V 30A TO263-7 |
2,165 | - |
|
Datenblatt |
Tape & Reel (TR) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +15V, -4V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
PC3M0060065L650V MOSFET |
2,728 | - |
|
Tape & Reel (TR) | - | Active | - | SiCFET (Silicon Carbide) | 650 V | 38A | - | - | - | - | - | - | - | 126W | 150°C (TJ) | - | |
|
P3M12080G7SICFET N-CH 1200V 32A TO-263-7 |
3,143 | - |
|
Datenblatt |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A | 15V | 96mOhm @ 20A, 15V | 2.2V @ 30mA (Typ) | - | +19V, -8V | - | - | 136W | -55°C ~ 175°C (TJ) | Surface Mount |
|
C3M0065100J-TRSICFET N-CH 1000V 35A TO263-7 |
3,530 | - |
|
Datenblatt |
Tape & Reel (TR) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
AS1M080120PN-CHANNEL SILICON CARBIDE POWER |
2,220 | - |
|
Datenblatt |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PC3M0045065L650V MOSFET |
2,513 | - |
|
Tape & Reel (TR) | - | Active | - | SiCFET (Silicon Carbide) | 650 V | 51A | - | - | - | - | - | - | - | 160W | 150°C (TJ) | - | |
|
P3M06025K4SICFET N-CH 650V 97A TO247-4 |
3,905 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A | 15V | 34mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +20V, -8V | - | - | 326W | -55°C ~ 175°C (TJ) | Through Hole |
|
P3M12040G7SICFET N-CH 1200V 69A TO-263-7 |
3,985 | - |
|
Datenblatt |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 69A | 15V | 53mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +19V, -8V | - | - | 357W | -55°C ~ 175°C (TJ) | Surface Mount |
|
P3M12040K4SICFET N-CH 1200V 63A TO-247-3 |
2,209 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +21V, -8V | - | - | 349W | -55°C ~ 175°C (TJ) | Through Hole |
|
GPIHV30SB5LGANFET N-CH 1200V 30A TO263-5L |
3,091 | - |
|
Datenblatt |
Tube | - | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 30A | 6V | - | 1.4V @ 3.5mA | 8.25 nC @ 6 V | +7.5V, -12V | 236 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
AS1M040120PN-CHANNEL SILICON CARBIDE POWER |
2,829 | - |
|
Datenblatt |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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