Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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FDB070AN06A0POWER FIELD-EFFECT TRANSISTOR, 1 |
2,881 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK768R1-100E,118NOW NEXPERIA BUK768R1-100E - 100 |
2,966 | - |
|
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 8.1mOhm @ 25A, 10V | 4V @ 1mA | 108 nC @ 10 V | ±20V | 7380 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDP8N50NZPOWER FIELD-EFFECT TRANSISTOR, 8 |
2,187 | - |
|
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Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPD30N06S2L-23Original and genuine |
8,500 | - |
|
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1091 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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FCP850N80ZMOSFET N-CH 800V 8A TO220-3 |
3,631 | - |
|
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 136W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPD50N03S2-07OPTLMOS N-CHANNEL POWER MOSFET |
2,041 | - |
|
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 68 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK9615-100E,118MOSFET N-CH 100V 66A D2PAK |
3,312 | - |
|
![]() Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 66A (Tc) | 5V, 10V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 60 nC @ 5 V | ±10V | 6813 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDA38N30POWER FIELD-EFFECT TRANSISTOR, 3 |
2,436 | - |
|
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Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 85mOhm @ 19A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFB3207ZPBFIRFB3207 - 12V-300V N-CHANNEL PO |
2,246 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4410ZGPBFIRFB4410 - 12V-300V N-CHANNEL PO |
3,919 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQU1N80TUMOSFET N-CH 800V 1A I-PAK |
2,858 | - |
|
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Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 5V @ 250µA | 7.2 nC @ 10 V | ±30V | 195 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFS4115-7PPBFMOSFET N-CH 150V 105A D2PAK |
2,533 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQT3P20TF_SB821001-ELEMENT, P-CHANNEL POWER MOSFE |
2,089 | - |
|
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Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 670mA (Tc) | 10V | 2.7Ohm @ 335mA, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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2N7002CK2N7002 - SMALL SIGNAL FIELD-EFFE |
2,848 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFB31N20DPBFMOSFET N-CH 200V 31A TO220AB |
3,972 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 107 nC @ 10 V | ±30V | 2370 pF @ 25 V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFB4321PBFIRFB4321 - 12V-300V N-CHANNEL PO |
3,315 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 50 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDB045AN08A0POWER FIELD-EFFECT TRANSISTOR, 1 |
2,660 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 19A (Ta), 90A (Tc) | 6V, 10V | 4.5mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDPF17N60NTMOSFET N-CH 600V 17A TO220F |
3,357 | - |
|
![]() Datenblatt |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 3040 pF @ 25 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFH3707TRPBFIRFH3707 - 12V-300V N-CHANNEL PO |
2,802 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1 nC @ 4.5 V | ±20V | 755 pF @ 15 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFR3711ZTRPBFIRFR3711 - 12V-300V N-CHANNEL PO |
3,940 | - |
|
![]() Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2160 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |