Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDB52N20TMPOWER FIELD-EFFECT TRANSISTOR, 5 |
3,757 | - |
|
Datenblatt |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2900 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFR7440TRPBFIRFR7440 - 12V-300V N-CHANNEL PO |
3,094 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFS7434-7PPBFMOSFET N-CH 40V 240A D2PAK |
2,198 | - |
|
Datenblatt |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFSL7434PBFMOSFET N-CH 40V 195A TO262 |
3,710 | - |
|
Datenblatt |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IRFZ34NSTRRPBFMOSFET N-CH 55V 29A D2PAK |
3,954 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FDS86267PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,641 | - |
|
Datenblatt |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 6V, 10V | 255mOhm @ 2.2A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 1130 pF @ 75 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDS9431AP-CHANNEL 2.5V SPECIFIED MOSFET |
3,344 | - |
|
Datenblatt |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 130mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 405 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
MIC94030YM4TINYFET P-CHANNEL MOSFET |
2,795 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
FDT3612POWER FIELD-EFFECT TRANSISTOR, 3 |
3,942 | - |
|
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.7A (Ta) | 6V, 10V | 120mOhm @ 3.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 632 pF @ 50 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ||
FQP20N06LPOWER FIELD-EFFECT TRANSISTOR, 2 |
3,327 | - |
|
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Tc) | 5V, 10V | 55mOhm @ 10.5A, 10V | 2.5V @ 250µA | 13 nC @ 5 V | ±20V | 630 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | ||
NX2301P,21520 V, 2 A P-CHANNEL TRENCH MOSFE |
2,808 | - |
|
Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 120mOhm @ 1A, 4.5V | 1.1V @ 250µA | 6 nC @ 4.5 V | ±8V | 380 pF @ 6 V | - | 400mW (Ta), 2.8W (Tc) | 150°C (TJ) | Surface Mount | |
NP60N055VUK-E1-AYMOSFET N-CH 55V 60A TO252-3 |
2,061 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 60A (Tc) | 10V | 5.5mOhm @ 30A, 10V | 4V @ 253µA | 63 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | |
NX138BKRNX138BK - 60 V, SINGLE N-CHANNEL |
3,879 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 265mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.49 nC @ 4.5 V | ±20V | 20.2 pF @ 30 V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRLML0060TRPBFIRLML0060 - 20V-100V N-CHANNEL S |
3,212 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Ta) | 4.5V, 10V | 92mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5 nC @ 4.5 V | ±16V | 290 pF @ 25 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
PSMN025-80YLXPSMN025-80YL - N-CHANNEL 80V, LO |
2,421 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 37A (Tc) | 5V, 10V | 25mOhm @ 10A, 10V | 2.1V @ 1mA | 17.1 nC @ 5 V | ±20V | 2703 pF @ 25 V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRLZ24NSPBFMOSFET N-CH 55V 18A D2PAK |
2,472 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IPP60R190C6POWER FIELD-EFFECT TRANSISTOR, 2 |
3,096 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
PMPB48EP,115MOSFET P-CH 30V 4.7A DFN2020MD-6 |
2,065 | - |
|
Datenblatt |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 860 pF @ 15 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
MIC94030YM4TRMOSFET P-CH 16V 1A SOT143 |
3,038 | - |
|
Datenblatt |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | - | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | ±16V | 100 pF @ 12 V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDMS86320POWER FIELD-EFFECT TRANSISTOR, 1 |
2,992 | - |
|
Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10.5A (Ta), 22A (Tc) | 8V, 10V | 11.7mOhm @ 10.5A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±20V | 2640 pF @ 40 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |