Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VP0109N3-GMOSFET P-CH 90V 250MA TO92-3 |
2,116 | - |
|
![]() Datenblatt |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 90 V | 250mA (Tj) | 5V, 10V | 8Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF520PBF-BE3MOSFET N-CH 100V 9.2A TO220AB |
362 | - |
|
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
![]() |
IRF620PBF-BE3MOSFET N-CH 200V 5.2A TO220AB |
178 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | - | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRLB8748PBFMOSFET N-CH 30V 92A TO220AB |
425 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 92A (Tc) | 4.5V, 10V | 4.8mOhm @ 40A, 10V | 2.35V @ 50µA | 23 nC @ 4.5 V | ±20V | 2139 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRF200B211MOSFET N-CH 200V 12A TO220AB |
443 | - |
|
![]() Datenblatt |
Tube | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 12A (Tc) | 10V | 170mOhm @ 7.2A, 10V | 4.9V @ 50µA | 23 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
FQP13N10LMOSFET N-CH 100V 12.8A TO220-3 |
761 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 12.8A (Tc) | 5V, 10V | 180mOhm @ 6.4A, 10V | 2V @ 250µA | 12 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF720PBFMOSFET N-CH 400V 3.3A TO220AB |
196 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
BUZ11-NR4941MOSFET N-CH 50V 30A TO220-3 |
754 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 30A (Tc) | 10V | 40mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP055N03LGXKSA1MOSFET N-CH 30V 50A TO220-3 |
629 | - |
|
![]() Datenblatt |
Tube | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
FQPF2N60CMOSFET N-CH 600V 2A TO220F |
169 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.7Ohm @ 1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
FQPF11P06MOSFET P-CH 60V 8.6A TO220F |
379 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.6A (Tc) | 10V | 175mOhm @ 4.3A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
FQP6N40CMOSFET N-CH 400V 6A TO220-3 |
428 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STP7N60M2MOSFET N-CH 600V 5A TO220 |
562 | - |
|
![]() Datenblatt |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 950mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8 nC @ 10 V | ±25V | 271 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF630PBFMOSFET N-CH 200V 9A TO220AB |
6,238 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRFU9014PBFMOSFET P-CH 60V 5.1A TO251AA |
2,675 | - |
|
![]() Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
APTM20UM03FAGMOSFET N-CH 200V 580A SP6 |
2,267 | - |
|
![]() Datenblatt |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 580A (Tc) | 10V | 3.6mOhm @ 290A, 10V | 5V @ 15mA | 840 nC @ 10 V | ±30V | 43300 pF @ 25 V | - | 2270W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() |
APTM10UM01FAGMOSFET N-CH 100V 860A SP6 |
2,074 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 860A (Tc) | 10V | 1.6mOhm @ 275A, 10V | 4V @ 12mA | 2100 nC @ 10 V | ±30V | 60000 pF @ 25 V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() |
APTM100UM60FAGMOSFET N-CH 1000V 129A SP6 |
3,566 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 129A (Tc) | 10V | 70mOhm @ 64.5A, 10V | 5V @ 15mA | 1116 nC @ 10 V | ±30V | 31100 pF @ 25 V | - | 2272W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() |
APTM120UM70DAGMOSFET N-CH 1200V 171A SP6 |
3,609 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 171A (Tc) | 10V | 80mOhm @ 85.5A, 10V | 5V @ 30mA | 1650 nC @ 10 V | ±30V | 43500 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() |
APTM120U10SCAVGMOSFET N-CH 1200V 116A SP6 |
3,348 | - |
|
![]() Datenblatt |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 116A (Tc) | 10V | 120mOhm @ 58A, 10V | 5V @ 20mA | 1100 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |