Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
IRD3CH101DB6

IRD3CH101DB6

DIODE GEN PURP 1.2KV 200A DIE

Infineon Technologies

2,822 -
IRD3CH101DB6

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 360 ns 3.6 µA @ 1200 V 1200 V 200A -40°C ~ 175°C 2.7 V @ 200 A
IRD3CH101DD6

IRD3CH101DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,263 -
IRD3CH101DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH101DF6

IRD3CH101DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,974 -
IRD3CH101DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH11DB6

IRD3CH11DB6

DIODE GEN PURP 1.2KV 25A DIE

Infineon Technologies

3,331 -
IRD3CH11DB6

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 190 ns 700 nA @ 1200 V 1200 V 25A -40°C ~ 150°C 2.7 V @ 25 A
IDW10G65C5XKSA1

IDW10G65C5XKSA1

DIODE SCHOTTKY 650V 10A TO247-3

Infineon Technologies

2,032 -
IDW10G65C5XKSA1

Datasheet

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 300pF @ 1V, 1MHz 0 ns 180 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
IRD3CH11DD6

IRD3CH11DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,381 -
IRD3CH11DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH11DF6

IRD3CH11DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,311 -
IRD3CH11DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH16DB6

IRD3CH16DB6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,304 -
IRD3CH16DB6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH16DD6

IRD3CH16DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,438 -
IRD3CH16DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH16DF6

IRD3CH16DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,725 -
IRD3CH16DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH24DB6

IRD3CH24DB6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,498 -
IRD3CH24DB6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH24DD6

IRD3CH24DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,738 -
IRD3CH24DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH24DF6

IRD3CH24DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,842 -
IRD3CH24DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH31DB6

IRD3CH31DB6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,761 -
IRD3CH31DB6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH31DD6

IRD3CH31DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

3,547 -
IRD3CH31DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH31DF6

IRD3CH31DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,043 -
IRD3CH31DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH42DB6

IRD3CH42DB6

DIODE GEN PURP 1.2KV 75A DIE

Infineon Technologies

2,476 -
IRD3CH42DB6

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 285 ns 1.5 µA @ 1200 V 1200 V 75A -40°C ~ 150°C 2.7 V @ 75 A
IRD3CH42DD6

IRD3CH42DD6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,014 -
IRD3CH42DD6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH42DF6

IRD3CH42DF6

DIODE CHIP EMITTER CONTROLLED

Infineon Technologies

2,226 -
IRD3CH42DF6

Datasheet

Bulk RoHS - - Obsolete - - - - - - - -
IRD3CH53DB6

IRD3CH53DB6

DIODE GEN PURP 1.2KV 100A DIE

Infineon Technologies

3,520 -
IRD3CH53DB6

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 270 ns 2 µA @ 1200 V 1200 V 100A -40°C ~ 150°C 2.7 V @ 100 A
Total 772 Record«Prev1... 2627282930313233...39Next»
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER