Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR115-TP

MUR115-TP

DIODE GPP SUPER FAST 1A DO-41

Micro Commercial Co

2,001 -
MUR115-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 45 ns - 150 V 1A -50°C ~ 150°C -
S3A V7G

S3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

3,537 -
S3A V7G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T4GHA1G

F1T4GHA1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

3,682 -
F1T4GHA1G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MSASC100W100H

MSASC100W100H

RECTIFIER

Microchip Technology

3,801 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 100 V 100A -65°C ~ 175°C 950 mV @ 80 A
BAT46WJ/ZLF

BAT46WJ/ZLF

DIODE SCHOTTKY 100V 250MA SC90

Nexperia USA Inc.

3,959 -
BAT46WJ/ZLF

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 39pF @ 0V, 1MHz 5.9 ns 9 µA @ 100 V 100 V 250mA (DC) 150°C (Max) 850 mV @ 250 mA
6A80GHA0G

6A80GHA0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

2,393 -
6A80GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
MUR140-TP

MUR140-TP

DIODE GPP SUPER FAST 1A DO-41

Micro Commercial Co

2,085 -
MUR140-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 60 ns - 400 V 1A -50°C ~ 150°C -
S3B V6G

S3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

3,246 -
S3B V6G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
F1T5G A1G

F1T5G A1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

3,978 -
F1T5G A1G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MSASC100W100HR

MSASC100W100HR

RECTIFIER

Microchip Technology

2,151 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 100 V 100A -65°C ~ 175°C 950 mV @ 80 A
BAT46WJ/ZLX

BAT46WJ/ZLX

DIODE SCHOTTKY 100V 250MA SC90

Nexperia USA Inc.

2,819 -
BAT46WJ/ZLX

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 39pF @ 0V, 1MHz 5.9 ns 9 µA @ 100 V 100 V 250mA (DC) 150°C (Max) 850 mV @ 250 mA
F1T1G A0G

F1T1G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

3,645 -
F1T1G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
R1200F-TP

R1200F-TP

DIODE GEN PURP 1.2KV 500MA DO41

Micro Commercial Co

3,768 -
R1200F-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 30pF @ 4V, 1MHz 500 ns - 1200 V 500mA -55°C ~ 150°C -
S3B V7G

S3B V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

3,904 -
S3B V7G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
F1T5GHA1G

F1T5GHA1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2,218 -
F1T5GHA1G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MSASC100W45H

MSASC100W45H

RECTIFIER

Microchip Technology

3,377 -
Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - - 45 V 100A -65°C ~ 175°C 800 mV @ 80 A
BAT54J/ZLX

BAT54J/ZLX

DIODE SCHOTTKY 30V 200MA SC90

Nexperia USA Inc.

2,229 -
BAT54J/ZLX

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 10pF @ 1V, 1MHz - 2 µA @ 25 V 30 V 200mA (DC) 150°C (Max) 800 mV @ 100 mA
F1T1GHA0G

F1T1GHA0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

3,016 -
F1T1GHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
R1200-TP

R1200-TP

DIODE GEN PURP 1.2KV 500MA DO41

Micro Commercial Co

2,392 -
R1200-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 30pF @ 4V, 1MHz - - 1200 V 500mA -55°C ~ 150°C -
S4A V6G

S4A V6G

DIODE GEN PURP 50V 4A DO214AB

Taiwan Semiconductor Corporation

2,912 -
S4A V6G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 4A -55°C ~ 150°C -
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER