Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SR002 R0G

SR002 R0G

DIODE SCHOTTKY 20V 500MA DO204AL

Taiwan Semiconductor Corporation

2,582 -
SR002 R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 500mA -55°C ~ 125°C 550 mV @ 500 mA
FR157G B0G

FR157G B0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

3,523 -
FR157G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2003GHC0G

SFAF2003GHC0G

DIODE GEN PURP 150V 20A ITO220AC

Taiwan Semiconductor Corporation

3,868 -
SFAF2003GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR202HB0G

SR202HB0G

DIODE SCHOTTKY 20V 2A DO204AC

Taiwan Semiconductor Corporation

2,773 -
SR202HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 2A -55°C ~ 125°C 550 mV @ 2 A
SK32BHM4G

SK32BHM4G

DIODE SCHOTTKY 20V 3A DO214AA

Taiwan Semiconductor Corporation

2,261 -
SK32BHM4G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 500 mV @ 3 A
SF66GHB0G

SF66GHB0G

DIODE GEN PURP 400V 6A DO201AD

Taiwan Semiconductor Corporation

2,985 -
SF66GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
SR002HR0G

SR002HR0G

DIODE SCHOTTKY 20V 500MA DO204AL

Taiwan Semiconductor Corporation

2,141 -
SR002HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 500mA -55°C ~ 125°C 550 mV @ 500 mA
VS-E5PX7506LHN3

VS-E5PX7506LHN3

75A, 600V, "X" SERIES FRED PT IN

Vishay General Semiconductor - Diodes Division

2,143 -
VS-E5PX7506LHN3

Datenblatt

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 48 ns 25 µA @ 600 V 600 V 75A -55°C ~ 175°C 2.2 V @ 75 A
S1GLS RQG

S1GLS RQG

DIODE, 1.2A, 400V, SOD-123HE

Taiwan Semiconductor Corporation

3,503 -
S1GLS RQG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 400 V 400 V 1.2A -55°C ~ 175°C 1.3 V @ 1.2 A
SBA140AS_R1_00001

SBA140AS_R1_00001

SOD-123, SKY

Panjit International Inc.

2,509 -
SBA140AS_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 1A -55°C ~ 150°C 510 mV @ 1 A
BAS70LS-QYL

BAS70LS-QYL

BAS70LS-Q/SOD882BD/XSON2

Nexperia USA Inc.

3,088 -
BAS70LS-QYL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 10 µA @ 70 V 70 V 70mA (DC) 150°C 1 V @ 15 mA
HER102G-TP

HER102G-TP

DIODE GEN PURP 100V 1A DO41

Micro Commercial Co

2,932 -
HER102G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 125°C 1 V @ 1 A
IMBD4448-HE3-18

IMBD4448-HE3-18

DIODE GEN PURP 75V 150MA SOT23

Vishay General Semiconductor - Diodes Division

3,393 -
IMBD4448-HE3-18

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 2.5 µA @ 70 V 75 V 150mA 150°C (Max) 1 V @ 10 mA
DNA30EM2200PZ-TUB

DNA30EM2200PZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS

3,041 -
DNA30EM2200PZ-TUB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.26 V @ 30 A
CGRA4002-G

CGRA4002-G

DIODE GEN PURP 100V 1A DO214AC

Comchip Technology

2,170 -
CGRA4002-G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
PG5392_R2_00001

PG5392_R2_00001

GLASS PASSIVATED JUNCTION PLASTI

Panjit International Inc.

2,672 -
Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 1 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.4 V @ 1.5 A
1N462A

1N462A

RECTIFIER DIODE

Rochester Electronics, LLC

2,848 -
1N462A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - - - - - -
HER103G-TP

HER103G-TP

DIODE GEN PURP 200V 1A DO41

Micro Commercial Co

2,223 -
HER103G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 125°C 1 V @ 1 A
IMBD4448-HE3-08

IMBD4448-HE3-08

DIODE GEN PURP 75V 150MA SOT23

Vishay General Semiconductor - Diodes Division

2,572 -
IMBD4448-HE3-08

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 2.5 µA @ 70 V 75 V 150mA 150°C (Max) 1 V @ 10 mA
DMA80IM1600HB

DMA80IM1600HB

PWR DIODE RECT 80A 1600V TO-247

IXYS

2,191 -
DMA80IM1600HB

Datenblatt

Tube DMA RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 43pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 80A -55°C ~ 150°C 1.17 V @ 80 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER