Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SFAF2001GHC0G

SFAF2001GHC0G

DIODE GEN PURP 50V 20A ITO220AC

Taiwan Semiconductor Corporation

3,134 -
SFAF2001GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1503HB0G

SR1503HB0G

DIODE SCHOTTKY 30V 15A R-6

Taiwan Semiconductor Corporation

3,818 -
SR1503HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 15A -50°C ~ 150°C 550 mV @ 15 A
ES3G M6G

ES3G M6G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

3,688 -
ES3G M6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
SK29AHM2G

SK29AHM2G

DIODE SCHOTTKY 90V 2A DO214AC

Taiwan Semiconductor Corporation

2,987 -
SK29AHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
SF64GHB0G

SF64GHB0G

DIODE GEN PURP 200V 6A DO201AD

Taiwan Semiconductor Corporation

3,872 -
SF64GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 6A -55°C ~ 150°C 975 mV @ 6 A
FR155GHB0G

FR155GHB0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

2,397 -
FR155GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002G C0G

SFAF2002G C0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation

2,369 -
SFAF2002G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504 B0G

SR1504 B0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

2,656 -
SR1504 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32A M2G

SK32A M2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation

2,173 -
SK32A M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
SF65G B0G

SF65G B0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2,897 -
SF65G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
FR156G B0G

FR156G B0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

3,966 -
FR156G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2002GHC0G

SFAF2002GHC0G

DIODE GEN PURP 100V 20A ITO220AC

Taiwan Semiconductor Corporation

3,138 -
SFAF2002GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR1504HB0G

SR1504HB0G

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

3,792 -
SR1504HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 15A -50°C ~ 150°C 550 mV @ 15 A
SK32AHM2G

SK32AHM2G

DIODE SCHOTTKY 20V 3A DO214AC

Taiwan Semiconductor Corporation

3,545 -
SK32AHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 150°C 550 mV @ 3 A
SF65GHB0G

SF65GHB0G

DIODE GEN PURP 300V 6A DO201AD

Taiwan Semiconductor Corporation

2,351 -
SF65GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 6A -55°C ~ 150°C 1.3 V @ 6 A
FR156GHB0G

FR156GHB0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

3,117 -
FR156GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
SFAF2003G C0G

SFAF2003G C0G

DIODE GEN PURP 150V 20A ITO220AC

Taiwan Semiconductor Corporation

2,536 -
SFAF2003G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 20A -55°C ~ 150°C 975 mV @ 20 A
SR202 B0G

SR202 B0G

DIODE SCHOTTKY 20V 2A DO204AC

Taiwan Semiconductor Corporation

3,326 -
SR202 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 2A -55°C ~ 125°C 550 mV @ 2 A
SK32B M4G

SK32B M4G

DIODE SCHOTTKY 20V 3A DO214AA

Taiwan Semiconductor Corporation

3,021 -
SK32B M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 500 mV @ 3 A
SF66G B0G

SF66G B0G

DIODE GEN PURP 400V 6A DO201AD

Taiwan Semiconductor Corporation

3,129 -
SF66G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER