Dioden-Bridge-Gleichrichter

制造商 Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)











































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ2506-HF

GBJ2506-HF

RECTIFIER BRIDGE 25A 600V GBJ

Comchip Technology

2,696 -
GBJ2506-HF

Datenblatt

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
UR8KB60

UR8KB60

BRIDGE RECT 1PHASE 600V 8A D3K

Taiwan Semiconductor Corporation

2,692 -
UR8KB60

Datenblatt

Tube - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
UR8KB80

UR8KB80

BRIDGE RECT 1PHASE 800V 8A D3K

Taiwan Semiconductor Corporation

3,372 -
UR8KB80

Datenblatt

Tube - Active Single Phase Standard 800 V 8 A 1.2 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
BR1005

BR1005

BRIDGE RECT 1PHASE 50V 10A BR-10

GeneSiC Semiconductor

2,785 -
BR1005

Datenblatt

Bulk - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR101

BR101

BRIDGE RECT 1P 100V 10A BR-10

GeneSiC Semiconductor

3,808 -
BR101

Datenblatt

Bulk - Active Single Phase Standard 100 V 10 A 1.1 V @ 5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR1010

BR1010

BRIDGE RECT 1PHASE 1KV 10A BR-10

GeneSiC Semiconductor

2,684 -
BR1010

Datenblatt

Bulk - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR102

BR102

BRIDGE RECT 1P 200V 10A BR-10

GeneSiC Semiconductor

3,996 -
BR102

Datenblatt

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR104

BR104

BRIDGE RECT 1P 400V 10A BR-10

GeneSiC Semiconductor

3,928 -
BR104

Datenblatt

Bulk - Active Single Phase Standard 400 V 10 A 1.1 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR106

BR106

BRIDGE RECT 1P 600V 10A BR-10

GeneSiC Semiconductor

3,653 -
BR106

Datenblatt

Bulk - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
KBJ408G

KBJ408G

BRIDGE RECT 1PHASE 800V 4A KBJ

Diodes Incorporated

2,480 -
KBJ408G

Datenblatt

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 5 µA @ 800 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBU6A-BP

GBU6A-BP

BRIDGE RECT 1PHASE 50V 6A GBU

Micro Commercial Co

3,440 -
GBU6A-BP

Datenblatt

Tube - Active Single Phase Standard 50 V 6 A 1 V @ 3 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBB05

VS-2KBB05

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division

3,762 -
Tube * Active - - - - - - - - -
BR10005SG-G

BR10005SG-G

BRIDGE RECT 1PHASE 50V 10A BR-8

Comchip Technology

2,490 -
BR10005SG-G

Datenblatt

Bulk - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Chassis Mount 4-Square, BR-8
BR1002SG-G

BR1002SG-G

BRIDGE RECT 1PHASE 200V 10A BR-8

Comchip Technology

3,162 -
BR1002SG-G

Datenblatt

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Chassis Mount 4-Square, BR-8
BR1008SG-G

BR1008SG-G

BRIDGE RECT 1PHASE 800V 10A BR-8

Comchip Technology

2,339 -
BR1008SG-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Chassis Mount 4-Square, BR-8
KBJ410G

KBJ410G

BRIDGE RECT 1PHASE 1KV 4A KBJ

Diodes Incorporated

2,212 -
KBJ410G

Datenblatt

Tube - Active Single Phase Standard 1 kV 4 A 1 V @ 2 A 5 µA @ 1000 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
VS-2KBB80

VS-2KBB80

RECTIFIER BRIDGE 800V 1.9A D-37

Vishay General Semiconductor - Diodes Division

2,043 -
Tube * Active - - - - - - - - -
DF1506S

DF1506S

BRIDGE RECT 1P 600V 1.5A DF-S

Diodes Incorporated

3,579 -
DF1506S

Datenblatt

Bulk - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 600 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
TS10P06G

TS10P06G

BRIDGE RECT 1P 800V 10A TS-6P

Taiwan Semiconductor Corporation

3,765 -
TS10P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 10 A 1.1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS10P07G

TS10P07G

BRIDGE RECT 1PHASE 1KV 10A TS-6P

Taiwan Semiconductor Corporation

2,088 -
TS10P07G

Datenblatt

Tube - Active Single Phase Standard 1 kV 10 A 1.1 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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