Dioden-Bridge-Gleichrichter

制造商 Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)











































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BR82

BR82

BRIDGE RECT 1PHASE 200V 8A BR-8

GeneSiC Semiconductor

2,202 -
BR82

Datenblatt

Bulk - Active Single Phase Standard 200 V 8 A 1.1 V @ 4 A 10 µA @ 200 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
BR84

BR84

BRIDGE RECT 1PHASE 400V 8A BR-8

GeneSiC Semiconductor

3,937 -
BR84

Datenblatt

Bulk - Active Single Phase Standard 400 V 8 A 1.1 V @ 1 A 10 µA @ 400 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
BR86

BR86

BRIDGE RECT 1PHASE 600V 8A BR-8

GeneSiC Semiconductor

3,081 -
BR86

Datenblatt

Bulk - Active Single Phase Standard 600 V 8 A 1.1 V @ 4 A 10 µA @ 600 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
G3SBA60-M3/45

G3SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

3,593 -
G3SBA60-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60-M3/51

G3SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

2,721 -
G3SBA60-M3/51

Datenblatt

Tray - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBJ25005G

KBJ25005G

BRIDGE RECT 1PHASE 50V 25A KBJ

GeneSiC Semiconductor

2,826 -
KBJ25005G

Datenblatt

Bulk - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2501G

KBJ2501G

BRIDGE RECT 1PHASE 100V 25A KBJ

GeneSiC Semiconductor

3,967 -
KBJ2501G

Datenblatt

Bulk - Active Single Phase Standard 100 V 25 A 1.05 V @ 12.5 A 10 µA @ 100 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2502G

KBJ2502G

BRIDGE RECT 1PHASE 200V 25A KBJ

GeneSiC Semiconductor

3,358 -
KBJ2502G

Datenblatt

Bulk - Active Single Phase Standard 200 V 25 A 1.05 V @ 12.5 A 10 µA @ 200 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2504G

KBJ2504G

BRIDGE RECT 1PHASE 400V 25A KBJ

GeneSiC Semiconductor

2,890 -
KBJ2504G

Datenblatt

Bulk - Active Single Phase Standard 400 V 25 A 1.05 V @ 12.5 A 10 µA @ 400 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2506G

KBJ2506G

BRIDGE RECT 1PHASE 600V 25A KBJ

GeneSiC Semiconductor

2,374 -
KBJ2506G

Datenblatt

Bulk - Active Single Phase Standard 600 V 25 A 1.05 V @ 12.5 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2508G

KBJ2508G

BRIDGE RECT 1PHASE 800V 25A KBJ

GeneSiC Semiconductor

3,201 -
KBJ2508G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2510G

KBJ2510G

BRIDGE RECT 1PHASE 1KV 25A KBJ

GeneSiC Semiconductor

2,883 -
KBJ2510G

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
GBU804H

GBU804H

BRIDGE RECT 1PHASE 400V 8A GBU

Taiwan Semiconductor Corporation

2,813 -
GBU804H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU805H

GBU805H

BRIDGE RECT 1PHASE 600V 8A GBU

Taiwan Semiconductor Corporation

3,415 -
GBU805H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU806H

GBU806H

BRIDGE RECT 1PHASE 800V 8A GBU

Taiwan Semiconductor Corporation

2,637 -
GBU806H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU807H

GBU807H

BRIDGE RECT 1PHASE 1KV 8A GBU

Taiwan Semiconductor Corporation

2,939 -
GBU807H

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBP408G-BP

KBP408G-BP

BRIDGE RECT 1PHASE 800V 4A GBP

Micro Commercial Co

2,785 -
KBP408G-BP

Datenblatt

Tube - Active Single Phase Standard 800 V 4 A 1.05 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-SIP, GBP
TS25P05GH

TS25P05GH

BRIDGE RECT 1P 600V 25A TS-6P

Taiwan Semiconductor Corporation

3,107 -
TS25P05GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 25 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS25P06GH

TS25P06GH

BRIDGE RECT 1P 800V 25A TS-6P

Taiwan Semiconductor Corporation

3,182 -
TS25P06GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 25 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS25P07GH

TS25P07GH

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Taiwan Semiconductor Corporation

2,586 -
TS25P07GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 25 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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