Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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C3M0120065D650V 120M SIC MOSFET |
2,972 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 28 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 98W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C3M0065090J-TRSICFET N-CH 900V 35A D2PAK-7 |
2,240 | - |
|
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0075120KSICFET N-CH 1200V 30A TO247-4L |
2,058 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M0080120DSICFET N-CH 1200V 36A TO247-3 |
809 | - |
|
![]() Datasheet |
Bulk | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62 nC @ 5 V | +25V, -10V | 950 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0032120KSICFET N-CH 1200V 63A TO247-4L |
3,408 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 118 nC @ 15 V | +15V, -4V | 3357 pF @ 1000 V | - | 283W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C2M0045170DSICFET N-CH 1700V 72A TO247-3 |
3,387 | - |
|
![]() Datasheet |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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C3M0160120DSICFET N-CH 1200V 17A TO247-3 |
3,892 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 38 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0040120J11200V 40 M SIC MOSFET |
901 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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C3M0120100JSICFET N-CH 1000V 22A D2PAK-7 |
3,573 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | +15V, -4V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0065090DSICFET N-CH 900V 36A TO247-3 |
2,498 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0280090J-TRSICFET N-CH 900V 11A D2PAK-7 |
3,231 | - |
|
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0280090DSICFET N-CH 900V 11.5A TO247-3 |
3,800 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0350120DSICFET N-CH 1200V 7.6A TO247-3 |
3,704 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.6A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 19 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0120090J-TRSICFET N-CH 900V 22A D2PAK-7 |
2,339 | - |
|
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C2M0280120DSICFET N-CH 1200V 10A TO247-3 |
42,695 | - |
|
![]() Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4 nC @ 20 V | +25V, -10V | 259 pF @ 1000 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M1000170DSICFET N-CH 1700V 4.9A TO247-3 |
3,163 | - |
|
![]() Datasheet |
Tube | Z-FET™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13 nC @ 20 V | +25V, -10V | 191 pF @ 1000 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M1000170JSICFET N-CH 1700V 5.3A D2PAK |
2,792 | - |
|
![]() Datasheet |
Bulk | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0120090JSICFET N-CH 900V 22A D2PAK-7 |
7,112 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0120100KSICFET N-CH 1000V 22A TO247-4L |
2,957 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | ±15V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0060065JSICFET N-CH 650V 36A TO263-7 |
1,664 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |