Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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C3M0060065DSICFET N-CH 650V 37A TO247-3 |
431 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C3M0065090JSICFET N-CH 900V 35A D2PAK-7 |
8,178 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0075120JSICFET N-CH 1200V 30A D2PAK-7 |
3,648 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0075120DSICFET N-CH 1200V 30A TO247-3 |
274 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0065100JSICFET N-CH 1000V 35A D2PAK-7 |
4,452 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0065100KSICFET N-CH 1000V 35A TO247-4L |
2,020 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0040120D1200V 40MOHM SIC MOSFET |
597 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | 101 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0025065KGEN 3 650V 25 M SIC MOSFET |
930 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 112 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0025065DGEN 3 650V 25 M SIC MOSFET |
782 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 108 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C3M0021120KSICFET N-CH 1200V 100A TO247-4L |
5,065 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C3M0021120DSICFET N-CH 1200V 100A TO247-3 |
2,372 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 160 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C3M0030090KSICFET N-CH 900V 63A TO247-4 |
4,934 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87 nC @ 15 V | +15V, -4V | 1864 pF @ 600 V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M0040120DSICFET N-CH 1200V 60A TO247-3 |
2,114 | - |
|
![]() Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +25V, -10V | 1893 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0015065DSICFET N-CH 650V 120A TO247-3 |
820 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C2M0025120DSICFET N-CH 1200V 90A TO247-3 |
7,165 | - |
|
![]() Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161 nC @ 20 V | +25V, -10V | 2788 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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C3M0016120KSICFET N-CH 1.2KV 115A TO247-4 |
584 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211 nC @ 15 V | +15V, -4V | 6085 pF @ 1000 V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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C2M0045170PSICFET N-CH 1700V 72A TO247-4 |
2,435 | - |
|
![]() Datasheet |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
C3M0015065KSICFET N-CH 650V 120A TO247-4L |
1,036 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C2M1000170J-TRSICFET N-CH 1700V 5.3A D2PAK-7 |
4,800 | - |
|
![]() Datasheet |
Tape & Reel (TR) | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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C3M0280090JSICFET N-CH 900V 11A D2PAK-7 |
5,894 | - |
|
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |