Transistoren von JFETs

制造商 Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType























































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
J174,126

J174,126

JFET P-CH 30V 400MW TO92-3

NXP USA Inc.

2,211 -
J174,126

Datenblatt

Tape & Box (TB) - Obsolete P-Channel 30 V 30 V 20 mA @ 15 V - 5 V @ 10 nA 8pF @ 10V (VGS) 85 Ohms 400 mW 150°C (TJ) Through Hole
J176,126

J176,126

JFET P-CH 30V 400MW TO92-3

NXP USA Inc.

3,195 -
J176,126

Datenblatt

Tape & Box (TB) - Obsolete P-Channel 30 V 30 V 2 mA @ 15 V - 1 V @ 10 nA 8pF @ 10V (VGS) 250 Ohms 400 mW 150°C (TJ) Through Hole
J108,126

J108,126

JFET N-CH 25V 0.4W SOT54

NXP USA Inc.

3,339 -
J108,126

Datenblatt

Tape & Box (TB) - Obsolete N-Channel 25 V 25 V 80 mA @ 5 V - 10 V @ 1 µA 30pF @ 0V 8 Ohms 400 mW 150°C (TJ) Through Hole
J110,126

J110,126

JFET N-CH 25V 0.4W SOT54

NXP USA Inc.

3,113 -
J110,126

Datenblatt

Tape & Box (TB) - Obsolete N-Channel 25 V 25 V 10 mA @ 5 V - 4 V @ 1 µA 30pF @ 0V 18 Ohms 400 mW 150°C (TJ) Through Hole
IJW120R070T1FKSA1

IJW120R070T1FKSA1

IJW120R070 - POWER FIELD-EFFECT

Infineon Technologies

418 -
IJW120R070T1FKSA1

Datenblatt

Bulk * Active - - - - - - - - - - -
Total 1105 Record«Prev1... 5253545556Next»
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER