Transistoren von IGBTs

制造商 Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature 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Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXYA30N120A4HV

IXYA30N120A4HV

DISC IGBT XPT-GENX4 TO-263D2

IXYS

3,966 -
Tube GenX4™, XPT™ Active PT 1200 V 106 A 184 A 1.9V @ 15V, 25A 500 W 4mJ (on), 3.4mJ (off) Standard 57 nC 15ns/235ns 960V, 25A, 5Ohm, 15V 42 ns -55°C ~ 175°C (TJ) Surface Mount
IXBT16N170AHV

IXBT16N170AHV

IGBT

IXYS

3,035 -
IXBT16N170AHV

Datenblatt

Tube BIMOSFET™ Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Surface Mount
IXYA20N120C3HV-TRL

IXYA20N120C3HV-TRL

IXYA20N120C3HV TRL

IXYS

3,279 -
Tape & Reel (TR) XPT™, GenX3™ Active - 1200 V 40 A 96 A 3.4V @ 15V, 20A 278 W 1.3mJ (on), 500µJ (off) Standard 53 nC 20ns/90ns 600V, 20A, 10Ohm, 15V 29 ns -55°C ~ 175°C (TJ) Surface Mount
IXYH20N120C4

IXYH20N120C4

IGBT DISCRETE TO-247

IXYS

3,288 -
Tube - Active - - - - - - - - - - - - - -
IXYP30N120A4

IXYP30N120A4

IGBT DISCRETE TO-220

IXYS

2,604 -
IXYP30N120A4

Datenblatt

Tube XPT™, GenX4™ Active - 1200 V 106 A 184 A 1.9V @ 15V, 25A 500 W 4mJ (on), 3.4mJ (off) Standard 57 nC 15ns/235ns 960V, 25A, 5Ohm, 15V 42 ns -55°C ~ 175°C (TJ) Through Hole
IXBT2N250-TR

IXBT2N250-TR

IXBT2N250 TR

IXYS

3,158 -
Tape & Reel (TR) BIMOSFET™ Active - 2500 V 5 A 13 A 3.5V @ 15V, 2A 32 W - Standard 10.6 nC 30ns/70ns 2000V, 2A, 47Ohm, 15V 920 ns -55°C ~ 150°C (TJ) Surface Mount
IXXP50N60B3

IXXP50N60B3

IGBT

IXYS

3,975 -
IXXP50N60B3

Datenblatt

Tube XPT™, GenX3™ Active - 600 V 120 A 200 A 1.8V @ 15V, 36A 600 W 670µJ (on), 1.2mJ (off) Standard 70 nC 27ns/150ns 360V, 36A, 5Ohm, 15V 40 ns -55°C ~ 175°C (TJ) Through Hole
IXXA50N60B3

IXXA50N60B3

IGBT

IXYS

2,400 -
IXXA50N60B3

Datenblatt

Tube XPT™, GenX3™ Active - 600 V 120 A 200 A 1.8V @ 15V, 36A 600 W 670µJ (on), 1.2mJ (off) Standard 70 nC 27ns/150ns 360V, 36A, 5Ohm, 15V 40 ns -55°C ~ 175°C (TJ) Surface Mount
APT13GP120BDQ1G

APT13GP120BDQ1G

IGBT 1200V 41A 250W TO247

Microchip Technology

2,077 -
APT13GP120BDQ1G

Datenblatt

Tube POWER MOS 7® Active PT 1200 V 41 A 50 A 3.9V @ 15V, 13A 250 W 115µJ (on), 165µJ (off) Standard 55 nC 9ns/28ns 600V, 13A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKFW75N60ETXKSA1

IKFW75N60ETXKSA1

INDUSTRY 14

Infineon Technologies

3,186 -
IKFW75N60ETXKSA1

Datenblatt

Tube TrenchStop™ Active Trench Field Stop 600 V 80 A 225 A 2V @ 15V, 75A 178 W 2.7mJ (on), 2.35J (off) Standard 440 nC 33ns/340ns 400V, 75A, 5Ohm, 15V 107 ns -40°C ~ 175°C (TJ) Through Hole
IXYH40N65C3H1

IXYH40N65C3H1

IGBT 650V 80A 300W TO247

IXYS

3,698 -
IXYH40N65C3H1

Datenblatt

Tube GenX3™, XPT™ Active PT 650 V 80 A 180 A 2.2V @ 15V, 40A 300 W 860µJ (on), 400µJ (off) Standard 70 nC 26ns/106ns 400V, 30A, 10Ohm, 15V 120 ns - Through Hole
APT44GA60B

APT44GA60B

IGBT 600V 78A 337W TO-247

Microchip Technology

2,934 -
APT44GA60B

Datenblatt

Tube POWER MOS 8™ Active PT 600 V 78 A 130 A 2.5V @ 15V, 26A 337 W 409µJ (on), 258µJ (off) Standard 128 nC 16ns/84ns 400V, 26A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH30N65B3D1

IXYH30N65B3D1

DISC IGBT XPT-GENX3 TO-247AD

IXYS

3,575 -
Tube XPT™, GenX3™ Active PT 650 V 70 A 160 A 2.1V @ 15V, 30A 270 W 830µJ (on), 640µJ (off) Standard 45 nC 17ns/87ns 400V, 30A, 10Ohm, 15V 38 ns -55°C ~ 175°C (TJ) Through Hole
APT54GA60BD30

APT54GA60BD30

IGBT 600V 96A 416W TO247

Microchip Technology

3,073 -
APT54GA60BD30

Datenblatt

Tube - Active PT 600 V 96 A 161 A 2.5V @ 15V, 32A 416 W 534µJ (on), 466µJ (off) Standard 28 nC 17ns/112ns 400V, 32A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXXH60N65B4

IXXH60N65B4

IGBT 650V 116A 455W TO247AD

IXYS

2,301 -
IXXH60N65B4

Datenblatt

Tube GenX4™, XPT™ Active PT 650 V 116 A 250 A 2V @ 15V, 60A 455 W 3.13mJ (on), 1.15mJ (off) Standard 95 nC 37ns/145ns 400V, 60A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYQ40N65B3D1

IXYQ40N65B3D1

DISC IGBT XPT-GENX3 TO-3P (3)

IXYS

2,640 -
Tube GenX3™, XPT™ Active PT 650 V 86 A 195 A 2V @ 15V, 40A 300 W 800µJ (on), 700µJ (off) Standard 68 nC 20ns/140ns 400V, 30A, 10Ohm, 15V 37 ns -55°C ~ 175°C (TJ) Through Hole
IXXH50N60C3

IXXH50N60C3

IGBT 600V 100A 600W TO247AD

IXYS

3,981 -
IXXH50N60C3

Datenblatt

Tube GenX3™, XPT™ Active PT 600 V 100 A 200 A 2.3V @ 15V, 36A 600 W 720µJ (on), 330µJ (off) Standard 64 nC 24ns/62ns 360V, 36A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT36GA60SD15

APT36GA60SD15

IGBT PT COMBI 600V 36A TO-268

Microchip Technology

3,985 -
APT36GA60SD15

Datenblatt

Tube POWER MOS 8® Active PT 600 V 65 A 109 A 2.5V @ 15V, 20A 290 W 307µJ (on), 254µJ (off) Standard 102 nC 16ns/122ns 400V, 20A, 10Ohm, 15V 19 ns -55°C ~ 150°C (TJ) Surface Mount
IXYH75N65C3

IXYH75N65C3

IGBT 650V 170A 750W TO247

IXYS

3,982 -
IXYH75N65C3

Datenblatt

Tube GenX3™, XPT™ Active PT 650 V 170 A 360 A 2.3V @ 15V, 60A 750 W 2.8mJ (on), 1mJ (off) Standard 123 nC 27ns/93ns 400V, 60A, 3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AUIRG4PC40S-E

AUIRG4PC40S-E

IGBT 600V 60A 160W TO247

Infineon Technologies

3,956 -
AUIRG4PC40S-E

Datenblatt

Tube Automotive, AEC-Q101 Not For New Designs - 600 V 60 A 120 A 1.5V @ 15V, 31A 160 W 450µJ (on), 6.5mJ (off) Standard 150 nC 22ns/650ns 480V, 31A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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