Transistoren von IGBTs

制造商 Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature 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全部重置
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结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGTH60TS65DGC13

RGTH60TS65DGC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor

2,789 -
RGTH60TS65DGC13

Datenblatt

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RBN25H125S1FPQ-A0#CB0

RBN25H125S1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

2,513 -
RBN25H125S1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 1250 V 50 A - 2.34V @ 15V, 25A 223 W 1.1mJ (on), 800µJ (off) Standard 56 nC 19ns/109ns 600V, 25A, 10Ohm, 15V 102 ns 175°C (TJ) Through Hole
IKWH70N65WR6XKSA1

IKWH70N65WR6XKSA1

IGBT TRENCH

Infineon Technologies

2,199 -
Tube * Active - - - - - - - - - - - - - -
NTE3301

NTE3301

IGBT-N-CHAN ENHANCEMENT

NTE Electronics, Inc

2,120 -
NTE3301

Datenblatt

Bag - Active - 400 V 15 A 170 A 8V @ 20V, 170A 40 W - Standard - 150ns/450ns - - 150°C (TJ) Through Hole
STGP15M120F3

STGP15M120F3

TRENCH GATE FIELD-STOP, 1200 V

STMicroelectronics

3,457 -
STGP15M120F3

Datenblatt

Tube - Active Trench Field Stop 1200 V 30 A 60 A 2.3V @ 15V, 15A 259 W 550µJ (on), 850µJ (off) Standard 53 nC 26ns/122ns 600V, 15A, 22Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
FGHL75T65MQDTL4

FGHL75T65MQDTL4

FS4 MID SPEED IGBT 650V 75A TO24

onsemi

2,687 -
FGHL75T65MQDTL4

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 300 A 1.8V @ 15V, 75A 375 W 1.2mJ (on), 1.1mJ (off) Standard 149 nC 32ns/181ns 400V, 75A, 10Ohm, 15V 107 ns -55°C ~ 175°C (TJ) Through Hole
HGTG27N60C3DR

HGTG27N60C3DR

UFS SERIES N-CHANNEL IGBT

Harris Corporation

2,003 -
HGTG27N60C3DR

Datenblatt

Bulk - Active - 600 V 54 A 108 A 2.2V @ 15V, 27A 208 W - Standard 212 nC - - - -40°C ~ 150°C (TJ) Through Hole
FGHL75T65MQDT

FGHL75T65MQDT

FS4 MID SPEED IGBT 650V 75A TO24

onsemi

3,063 -
FGHL75T65MQDT

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 300 A 1.8V @ 15V, 75A 375 W 2.35mJ (on), 1.25mJ (off) Standard 149 nC 24ns/118ns 400V, 75A, 4.7Ohm, 15V 107 ns -55°C ~ 175°C (TJ) Through Hole
RJH65T04BDPMA0#T2F

RJH65T04BDPMA0#T2F

IGBT TRENCH 650V 60A TO-3PFP

Renesas Electronics America Inc

3,256 -
RJH65T04BDPMA0#T2F

Datenblatt

Tube - Active Trench 650 V 60 A - 1.95V @ 15V, 30A 65 W 360µJ (on), 350µJ (off) Standard 74 nC 35ns/125ns 400V, 30A, 10Ohm, 15V 80 ns 175°C (TJ) Through Hole
RBN75H65T1FPQ-A0#CB0

RBN75H65T1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

3,090 -
RBN75H65T1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 650 V 150 A - 2V @ 15V, 75A 312 W 1.6mJ (on), 1mJ (off) Standard 54 nC 29ns/113ns 400V, 75A, 16Ohm, 15V 72 ns 175°C (TJ) Through Hole
RGWX5TS65GC11

RGWX5TS65GC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor

3,683 -
RGWX5TS65GC11

Datenblatt

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 64ns/229ns 400V, 75A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
MIW30N65FA-BP

MIW30N65FA-BP

IGBT 650V 30A,TO-247AB

Micro Commercial Co

3,143 -
Tube - Active Trench Field Stop 650 V 60 A 120 A 2.4V @ 15V, 30A 187 W 870µJ (on), 260µJ (off) Standard 150 nC 37ns/113ns 300V, 30A, 33Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
FGH75T65SQDT-F155

FGH75T65SQDT-F155

650V 75A FS4 TRENCH IGBT

onsemi

2,668 -
FGH75T65SQDT-F155

Datenblatt

Tube - Active Trench Field Stop 650 V 150 A 300 A 2.1V @ 15V, 75A 375 W 300µJ (on), 70µJ (off) Standard 128 nC 23ns/120ns 400V, 18.8A, 4.7Ohm, 15V 76 ns -55°C ~ 175°C (TJ) Through Hole
FGHL75T65LQDTL4

FGHL75T65LQDTL4

FS4 LOW VCESAT IGBT 650V 75A TO2

onsemi

3,911 -
FGHL75T65LQDTL4

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 300 A 1.35V @ 15V, 75A 469 W 1.01mJ (on), 2.53mJ (off) Standard 779 nC 40ns/548ns 400V, 75A, 4.7Ohm, 15V 87 ns -55°C ~ 175°C (TJ) Through Hole
FGHL75T65LQDT

FGHL75T65LQDT

FS4 LOW VCESAT IGBT 650V 75A TO2

onsemi

3,551 -
FGHL75T65LQDT

Datenblatt

Tube - Active Trench Field Stop 650 V 80 A 300 A 1.35V @ 15V, 75A 469 W 1.88mJ (on), 2.38mJ (off) Standard 793 nC 48ns/568ns 400V, 75A, 4.7Ohm, 15V 152 ns -55°C ~ 175°C (TJ) Through Hole
APT50GN60BDQ2G

APT50GN60BDQ2G

IGBT 600V 107A 366W TO247

Microchip Technology

2,371 -
APT50GN60BDQ2G

Datenblatt

Tube - Active Trench Field Stop 600 V 107 A 150 A 1.85V @ 15V, 50A 366 W 1185µJ (on), 1565µJ (off) Standard 325 nC 20ns/230ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IKW40N65RH5XKSA1

IKW40N65RH5XKSA1

INDUSTRY 14

Infineon Technologies

2,020 -
IKW40N65RH5XKSA1

Datenblatt

Tube TrenchStop™ 5 Active Trench Field Stop 650 V 74 A 160 A 2.1V @ 15V, 40A 250 W 160µJ (on), 120µJ (off) Standard 95 nC 18ns/165ns 400V, 20A, 15Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRGP30B120KD-EP-INF

IRGP30B120KD-EP-INF

MOTOR CONTROL CO-PACK IGBT W/ULT

Infineon Technologies

3,450 -
Bulk * Active - - - - - - - - - - - - - -
FGHL75T65MQD

FGHL75T65MQD

IGBT 650V 75A TO247

onsemi

3,190 -
Tube - Active Trench Field Stop 650 V 80 A 300 A 1.8V @ 15V, 75A 375 W 1.94mJ (on), 1.55mJ (off) Standard 145 nC 33ns/176ns 400V, 75A, 10Ohm, 15V 36 ns -55°C ~ 175°C (TJ) Through Hole
RBN40H125S1FPQ-A0#CB0

RBN40H125S1FPQ-A0#CB0

ABU / IGBT

Renesas Electronics America Inc

3,597 -
RBN40H125S1FPQ-A0#CB0

Datenblatt

Tube - Active Trench 1250 V 80 A - 2.34V @ 15V, 40A 319 W 2mJ (on), 1.4mJ (off) Standard 85 nC 25ns/124ns 600V, 40A, 10Ohm, 15V 156 ns 175°C (TJ) Through Hole
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