Transistoren von IGBTs

制造商 Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature 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全部重置
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结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGTH40TS65DGC11

RGTH40TS65DGC11

IGBT 650V 40A 144W TO-247N

Rohm Semiconductor

3,499 -
RGTH40TS65DGC11

Datenblatt

Tube - Active Trench Field Stop 650 V 40 A 80 A 2.1V @ 15V, 20A 144 W - Standard 40 nC 22ns/73ns 400V, 20A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
AIGB15N65F5ATMA1

AIGB15N65F5ATMA1

DISCRETE SWITCHES

Infineon Technologies

2,953 -
AIGB15N65F5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 15 A - - - - Standard - - - - - Surface Mount
IRGS4064DPBF

IRGS4064DPBF

IGBT WITH RECOVERY DIODE

International Rectifier

2,270 -
IRGS4064DPBF

Datenblatt

Tube - Obsolete Trench 600 V 20 A 40 A 1.91V @ 15V, 10A 101 W 29µJ (on), 200µJ (off) Standard 32 nC 27ns/79ns 400V, 10A, 22Ohm, 15V 62 ns -55°C ~ 175°C (TJ) Surface Mount
IGP15N60TXKSA1

IGP15N60TXKSA1

IGBT 600V 30A 130W TO220-3

Infineon Technologies

2,491 -
IGP15N60TXKSA1

Datenblatt

Tube TrenchStop® Active Trench Field Stop 600 V 30 A 45 A 2.05V @ 15V, 15A 130 W 570µJ Standard 87 nC 17ns/188ns 400V, 15A, 15Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG4BC30W-STRLP

IRG4BC30W-STRLP

600V WARP 60-150 KHZ DISCRETE IG

International Rectifier

3,643 -
IRG4BC30W-STRLP

Datenblatt

Tube - Active - 600 V 23 A 92 A 2.7V @ 15V, 12A 100 W 130µJ (on), 130µJ (off) Standard 51 nC 25ns/99ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGTP10N40E1D

HGTP10N40E1D

17.5A, 400V, N-CHANNEL IGBT

Harris Corporation

2,744 -
HGTP10N40E1D

Datenblatt

Bulk - Active - 400 V 17.5 A - 3.2V @ 20V, 17.5A 75 W - Standard 19 nC - - - -55°C ~ 150°C (TJ) Through Hole
IRG4IBC20FDPBF

IRG4IBC20FDPBF

FAST COPACK IGBT W/ULTRAFAST SOF

International Rectifier

2,790 -
IRG4IBC20FDPBF

Datenblatt

Bulk - Active - 600 V 14.3 A 64 A 2V @ 15V, 9A 34 W 250µJ (on), 640µJ (off) Standard 27 nC 43ns/240ns 480V, 9A, 50Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
RGTH60TS65DGC11

RGTH60TS65DGC11

IGBT 650V 58A 194W TO-247N

Rohm Semiconductor

3,720 -
RGTH60TS65DGC11

Datenblatt

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGT60TS65DGC11

RGT60TS65DGC11

IGBT 650V 55A 194W TO-247N

Rohm Semiconductor

129 -
RGT60TS65DGC11

Datenblatt

Tube,Tube - Not For New Designs Trench Field Stop 650 V 55 A 90 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 29ns/100ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
AIKB15N65DH5ATMA1

AIKB15N65DH5ATMA1

DISCRETE SWITCHES

Infineon Technologies

2,230 -
AIKB15N65DH5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 15 A - - - - Standard - - - - - Surface Mount
AIKB15N65DF5ATMA1

AIKB15N65DF5ATMA1

DISCRETE SWITCHES

Infineon Technologies

3,988 -
AIKB15N65DF5ATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 15 A - - - - Standard - - - - - Surface Mount
HGT1S14N36G3VLT_NL

HGT1S14N36G3VLT_NL

IGBT, 18A, N-CHANNEL

Fairchild Semiconductor

3,253 -
HGT1S14N36G3VLT_NL

Datenblatt

Bulk - Active - 390 V 18 A - 2.2V @ 5V, 14A 100 W - Logic 24 nC -/7µs 300V, 7A, 28Ohm, 5V - -40°C ~ 175°C (TJ) Through Hole
IRGIB10B60KD1P

IRGIB10B60KD1P

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

2,299 -
IRGIB10B60KD1P

Datenblatt

Bulk - Active NPT 600 V 16 A 32 A 2.1V @ 15V, 10A 44 W 156µJ (on), 165µJ (off) Standard 41 nC 25ns/180ns 400V, 10A, 50Ohm, 15V 79 ns -55°C ~ 175°C (TJ) Through Hole
RGT50TS65DGC11

RGT50TS65DGC11

IGBT 650V 48A 174W TO-247N

Rohm Semiconductor

431 -
RGT50TS65DGC11

Datenblatt

Tube,Tube - Not For New Designs Trench Field Stop 650 V 48 A 75 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/88ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
STGF20H60DF

STGF20H60DF

IGBT 600V 40A 37W TO220FP

STMicroelectronics

3,735 -
STGF20H60DF

Datenblatt

Tube - Active Trench Field Stop 600 V 40 A 80 A 2V @ 15V, 20A 37 W 209µJ (on), 261µJ (off) Standard 115 nC 42.5ns/177ns 400V, 20A, 10Ohm, 15V 90 ns -55°C ~ 175°C (TJ) Through Hole
RJH30H1DPP-M0#T2

RJH30H1DPP-M0#T2

IGBT

Renesas Electronics America Inc

3,777 -
RJH30H1DPP-M0#T2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRG4BC30KD-SPBF

IRG4BC30KD-SPBF

IGBT, 28A I(C), 600V V(BR)CES, N

International Rectifier

3,682 -
IRG4BC30KD-SPBF

Datenblatt

Bulk - Active - 600 V 28 A 56 A 2.7V @ 15V, 16A 100 W 600µJ (on), 580µJ (off) Standard 67 nC 60ns/160ns 480V, 16A, 23Ohm, 15V 42 ns -55°C ~ 150°C (TJ) Surface Mount
RGTH80TS65DGC11

RGTH80TS65DGC11

IGBT 650V 70A 234W TO-247N

Rohm Semiconductor

3,076 -
RGTH80TS65DGC11

Datenblatt

Tube - Active Trench Field Stop 650 V 70 A 160 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
AFGB30T65SQDN

AFGB30T65SQDN

650V/30A FS4 IGBT TO263 A

onsemi

2,338 -
AFGB30T65SQDN

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, EcoSPARK® Active - 650 V 60 A 120 A 2.1V @ 15V, 30A 220 W - Standard 56 nC 14.5ns/63.2ns 400V, 30A, 6Ohm, 15V 245 ns -55°C ~ 175°C (TJ) Surface Mount
RJP65T43DPQ-A0#T2

RJP65T43DPQ-A0#T2

IGBT TRENCH 650V 60A TO247A

Renesas Electronics America Inc

2,460 -
RJP65T43DPQ-A0#T2

Datenblatt

Tube - Active Trench 650 V 60 A - 2.4V @ 15V, 20A 150 W 170µJ (on), 130µJ (off) Standard 69 nC 35ns/105ns 400V, 20A, 10Ohm, 15V - 175°C (TJ) Through Hole
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