Transistoren von IGBTs

制造商 Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature 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全部重置
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Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRG8P60N120KD-EPBF

IRG8P60N120KD-EPBF

IRG8P60N120 - DISCRETE IGBT WITH

International Rectifier

2,524 -
IRG8P60N120KD-EPBF

Datenblatt

Bulk - Obsolete - 1200 V 100 A 120 A 2V @ 15V, 40A 420 W 2.8mJ (on), 2.3mJ (off) Standard 345 nC 40ns/240ns 600V, 40A, 5Ohm, 15V 210 ns -40°C ~ 150°C (TJ) Through Hole
IRG7PSH50UDPBF

IRG7PSH50UDPBF

IRG7PSH50 - DISCRETE IGBT WITH A

International Rectifier

2,075 -
IRG7PSH50UDPBF

Datenblatt

Bulk - Obsolete Trench 1200 V 116 A 150 A 2V @ 15V, 50A 462 W 3.6mJ (on), 2.2mJ (off) Standard 440 nC 35ns/430ns 600V, 50A, 5Ohm, 15V 190 ns -55°C ~ 150°C (TJ) Through Hole
FGY120T65SPD-F085

FGY120T65SPD-F085

IGBT, 650V, 120A FIELD STOP, TRE

onsemi

2,805 -
FGY120T65SPD-F085

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
IRG7PH42UDPBF

IRG7PH42UDPBF

IRG7PH42 - INSULATED GATE BIPOLA

International Rectifier

3,799 -
IRG7PH42UDPBF

Datenblatt

Bulk - Active Trench 1200 V 85 A 90 A 2V @ 15V, 30A 320 W 2.11mJ (on), 1.18mJ (off) Standard 157 nC 25ns/229ns 600V, 30A, 10Ohm, 15V 153 ns -55°C ~ 150°C (TJ) Through Hole
IRGPS4067DPBF

IRGPS4067DPBF

IRGPS4067 - DISCRETE IGBT WITH A

International Rectifier

2,579 -
IRGPS4067DPBF

Datenblatt

Bulk - Obsolete Trench 600 V 240 A 360 A 2.05V @ 15V, 120A 750 W 5.75mJ (on), 3.43mJ (off) Standard 240 nC 80ns/190ns 400V, 120A, 4.7Ohm, 15V 130 ns -55°C ~ 175°C (TJ) Through Hole
FGL40N120ANTU

FGL40N120ANTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

3,500 -
FGL40N120ANTU

Datenblatt

Bulk - Active NPT 1200 V 64 A 160 A 3.2V @ 15V, 40A 500 W 2.3mJ (on), 1.1mJ (off) Standard 220 nC 15ns/110ns 600V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4PSH71KDPBF

IRG4PSH71KDPBF

IRG4PSH71 - DISCRETE IGBT WITH A

International Rectifier

654 -
IRG4PSH71KDPBF

Datenblatt

Bulk - Obsolete - 1200 V 78 A 156 A 3.9V @ 15V, 42A 350 W 5.68mJ (on), 3.23mJ (off) Standard 410 nC 67ns/230ns 800V, 42A, 5Ohm, 15V 107 ns -55°C ~ 150°C (TJ) Through Hole
AUIRGPS4070D0

AUIRGPS4070D0

AUIRGPS4070D0 - AUTOMOTIVE IGBT

International Rectifier

3,761 -
AUIRGPS4070D0

Datenblatt

Bulk Automotive, AEC-Q101 Active Trench 600 V 240 A 360 A 2V @ 15V, 120A 750 W 5.7mJ (on), 4.2mJ (off) Standard 250 nC 40ns/140ns 400V, 120A, 4.7Ohm, 15V 210 ns -55°C ~ 175°C (TJ) Through Hole
STK762-921G-E

STK762-921G-E

IGBT ACTIVE FILTER POWER IC

Sanyo

600 -
STK762-921G-E

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FD1200R12IE4B1S1BDMA1

FD1200R12IE4B1S1BDMA1

FD1200R12IE4B1S1BD - IGBT

Infineon Technologies

156 -
Bulk * Obsolete - - - - - - - - - - - - - -
IXBH12N300

IXBH12N300

IGBT 3000V 30A 160W TO247

IXYS

2,907 -
IXBH12N300

Datenblatt

Tube BIMOSFET™ Active - 3000 V 30 A 100 A 3.2V @ 15V, 12A 160 W - Standard 62 nC - - 1.4 µs -55°C ~ 150°C (TJ) Through Hole
IXYX40N250CHV

IXYX40N250CHV

IGBT 2.5KV 70A TO247HV

IXYS

3,246 -
IXYX40N250CHV

Datenblatt

Tube XPT™ Active - 2500 V 70 A 380 A 4V @ 15V, 40A 1500 W 11.7mJ (on), 6.9mJ (off) Standard 270 nC 21ns/200ns 1250V, 40A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
RGT8TM65DGC9

RGT8TM65DGC9

FIELD STOP TRENCH IGBT

Rohm Semiconductor

899 -
RGT8TM65DGC9

Datenblatt

Tube - Active Trench Field Stop 650 V 5 A 12 A 2.1V @ 15V, 4A 16 W - Standard 13.5 nC 17ns/69ns 400V, 4A, 50Ohm, 15V 40 ns -40°C ~ 175°C (TJ) Through Hole
STGF3NC120HD

STGF3NC120HD

IGBT 1200V 6A 25W TO220FP

STMicroelectronics

2,307 -
STGF3NC120HD

Datenblatt

Tube PowerMESH™ Active - 1200 V 6 A 20 A 2.8V @ 15V, 3A 25 W 236µJ (on), 290µJ (off) Standard 24 nC 15ns/118ns 800V, 3A, 10Ohm, 15V 51 ns -55°C ~ 150°C (TJ) Through Hole
IGP20N65H5XKSA1

IGP20N65H5XKSA1

IGBT 650V 42A TO220-3

Infineon Technologies

201 -
IGP20N65H5XKSA1

Datenblatt

Tube TrenchStop® Active - 650 V 42 A 60 A 2.1V @ 15V, 20A 125 W 170µJ (on), 60µJ (off) Standard 48 nC 18ns/156ns 400V, 10A, 32Ohm, 15V - - Through Hole
RGT16TM65DGC9

RGT16TM65DGC9

FIELD STOP TRENCH IGBT

Rohm Semiconductor

998 -
RGT16TM65DGC9

Datenblatt

Tube - Active Trench Field Stop 650 V 9 A 24 A 2.1V @ 15V, 8A 22 W - Standard 21 nC 13ns/33ns 400V, 8A, 10Ohm, 15V 42 ns -40°C ~ 175°C (TJ) Through Hole
FGP3440G2-F085

FGP3440G2-F085

ECOSPARK 2 IGNITION IGBT

onsemi

225 -
FGP3440G2-F085

Datenblatt

Tube Automotive, AEC-Q101, EcoSPARK® Active - 400 V 26.9 A - 1.2V @ 4V, 6A 166 W - Logic 24 nC 1µs/5.3µs - - -40°C ~ 175°C (TJ) Through Hole
IGW40N60TPXKSA1

IGW40N60TPXKSA1

IGBT TRENCH/FS 600V 67A TO247-3

Infineon Technologies

225 -
IGW40N60TPXKSA1

Datenblatt

Tube TrenchStop™ Not For New Designs Trench Field Stop 600 V 67 A 120 A 1.8V @ 15V, 40A 246 W 1.06mJ (on), 610µJ (off) Standard 177 nC 18ns/222ns 400V, 40A, 10.1Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGT40TM65DGC9

RGT40TM65DGC9

FIELD STOP TRENCH IGBT

Rohm Semiconductor

852 -
RGT40TM65DGC9

Datenblatt

Tube - Active Trench Field Stop 650 V 17 A 60 A 2.1V @ 15V, 20A 39 W - Standard 40 nC 22ns/75ns 400V, 20A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
STGW20V60DF

STGW20V60DF

IGBT 600V 40A 167W TO247

STMicroelectronics

474 -
STGW20V60DF

Datenblatt

Tube - Active Trench Field Stop 600 V 40 A 80 A 2.2V @ 15V, 20A 167 W 200µJ (on), 130µJ (off) Standard 116 nC 38ns/149ns 400V, 20A, 15V 40 ns -55°C ~ 175°C (TJ) Through Hole
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