Transistoren

制造商 Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType




























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-40MT120PHAPBF

VS-40MT120PHAPBF

MTP - HALF BRIDGE IGBT

Vishay General Semiconductor - Diodes Division

2,114 -
VS-40MT120PHAPBF

Datenblatt

Tube - Active Trench Field Stop Half Bridge 1200 V 75 A 305 W 2.65V @ 15V, 40A 50 µA 3.2 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-GT140DA60U

VS-GT140DA60U

IGBT MOD 600V 200A 652W SOT227

Vishay General Semiconductor - Diodes Division

160 -
VS-GT140DA60U

Datenblatt

Bulk - Active Trench Single 600 V 200 A 652 W 2V @ 15V, 100A 100 µA - Standard No -40°C ~ 175°C (TJ) Chassis Mount
VS-ENM040M60P

VS-ENM040M60P

POWER MODULE

Vishay General Semiconductor - Diodes Division

3,162 -
VS-ENM040M60P

Datenblatt

Box * Active - - - - - - - - - - - -
VS-ENZ025C60N

VS-ENZ025C60N

POWER MODULE

Vishay General Semiconductor - Diodes Division

3,130 -
VS-ENZ025C60N

Datenblatt

Box * Active - - - - - - - - - - - -
VS-ENK025C65S

VS-ENK025C65S

POWER MODULE

Vishay General Semiconductor - Diodes Division

2,164 -
VS-ENK025C65S

Datenblatt

Box * Active - - - - - - - - - - - -
VS-GT50YF120NT

VS-GT50YF120NT

ECONO - 4 PACK IGBT

Vishay General Semiconductor - Diodes Division

2,200 -
VS-GT50YF120NT

Datenblatt

Box - Active Trench Field Stop Full Bridge 1200 V 64 A 231 W 2.8V @ 15V, 50A 50 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-ENW30S120T

VS-ENW30S120T

POWER MODULE

Vishay General Semiconductor - Diodes Division

2,666 -
VS-ENW30S120T

Datenblatt

Box * Active - - - - - - - - - - - -
APTGT100SK60T1G

APTGT100SK60T1G

IGBT MODULE 600V 150A 340W SP4

Microsemi Corporation

3,767 -
APTGT100SK60T1G

Datenblatt

Bulk - Obsolete Trench Field Stop Single 600 V 150 A 340 W 1.9V @ 15V, 100A 250 µA 6.1 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
APTGT100SK60TG

APTGT100SK60TG

IGBT MODULE 600V 150A 340W SP4

Microsemi Corporation

2,061 -
APTGT100SK60TG

Datenblatt

Bulk - Discontinued at Mosen Trench Field Stop Single 600 V 150 A 340 W 1.9V @ 15V, 100A 250 µA 6.1 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
APTGT100TA60PG

APTGT100TA60PG

IGBT MODULE 600V 150A 340W SP6P

Microsemi Corporation

3,006 -
APTGT100TA60PG

Datenblatt

Bulk - Obsolete Trench Field Stop Three Phase 600 V 150 A 340 W 1.9V @ 15V, 100A 250 µA 6.1 nF @ 25 V Standard No -40°C ~ 175°C (TJ) Chassis Mount
APTGT150A120D1G

APTGT150A120D1G

IGBT MODULE 1200V 220A 700W D1

Microsemi Corporation

2,845 -
Bulk - Obsolete Trench Field Stop Half Bridge 1200 V 220 A 700 W 2.1V @ 15V, 150A 4 mA 10.8 nF @ 25 V Standard No - Chassis Mount
VS-GT80DA60U

VS-GT80DA60U

IGBT MOD 600V 123A 454W SOT227

Vishay General Semiconductor - Diodes Division

3,923 -
VS-GT80DA60U

Datenblatt

Bulk FRED Pt® Active Trench Field Stop Single Switch 600 V 123 A 454 W 2.45V @ 15V, 80A 100 µA 10.8 nF @ 25 V Standard No -40°C ~ 175°C (TJ) Chassis Mount
FP15R12W1T4PB11BPSA1

FP15R12W1T4PB11BPSA1

IGBT MOD 1200V 30A 20MW

Infineon Technologies

2,516 -
FP15R12W1T4PB11BPSA1

Datenblatt

Tray EasyPIM™ Active Trench Field Stop Three Phase Inverter 1200 V 30 A 20 mW 2.25V @ 15V, 15A 1 mA 890 pF @ 25 V Three Phase Bridge Rectifier Yes -40°C ~ 150°C Chassis Mount
FF150R12YT3BOMA1

FF150R12YT3BOMA1

IGBT MOD 1200V 200A 625W

Infineon Technologies

2,057 -
Bulk - Not For New Designs - 2 Independent 1200 V 200 A 625 W 2.15V @ 15V, 150A 1 mA 10.5 nF @ 25 V Standard Yes -40°C ~ 125°C Chassis Mount
VS-GT100TP60N

VS-GT100TP60N

IGBT MOD 600V 160A INT-A-PAK

Vishay General Semiconductor - Diodes Division

3,167 -
VS-GT100TP60N

Datenblatt

Bulk - Active Trench Half Bridge 600 V 160 A 417 W 2.1V @ 15V, 100A 5 mA 7.71 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
VS-ETF075Y60U

VS-ETF075Y60U

IGBT MOD 600V 109A EMIPAK-2B

Vishay General Semiconductor - Diodes Division

3,049 -
VS-ETF075Y60U

Datenblatt

Bulk - Active Trench Three Level Inverter 600 V 100 A 294 W 1.93V @ 15V, 75A 100 µA 4.44 nF @ 30 V Standard Yes 175°C (TJ) Chassis Mount
BSM10GP120BOSA1

BSM10GP120BOSA1

IGBT MOD 1200V 20A 100W

Infineon Technologies

2,494 -
Tray - Last Time Buy - Three Phase Inverter 1200 V 20 A 100 W 2.85V @ 15V, 10A 500 µA 600 pF @ 25 V Three Phase Bridge Rectifier Yes -40°C ~ 125°C Chassis Mount
DF300R12KE3HOSA1

DF300R12KE3HOSA1

IGBT MOD 1200V 480A 1470W

Infineon Technologies

3,986 -
DF300R12KE3HOSA1

Datenblatt

Bulk - Active - Single 1200 V 480 A 1470 W 2.15V @ 15V, 300A 5 mA 21 nF @ 25 V Standard No -40°C ~ 125°C Chassis Mount
VS-ETY020P120F

VS-ETY020P120F

IGBT MOD OUTPUT & SW EMIPAK 2B

Vishay General Semiconductor - Diodes Division

2,047 -
Tray - Active - - - - - - - - - - - -
BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

IGBT MOD 1200V 50A 350W

Infineon Technologies

2,088 -
Tray - Not For New Designs - Three Phase Inverter 1200 V 50 A 350 W 3V @ 15V, 50A 1 mA 3.3 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
Total 3931 Record«Prev1... 160161162163164165166167...197Next»
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER