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Transistoren von FETs, MOSFETs von Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTH44P15TMOSFET P-CH 150V 44A TO247 |
3,128 | - |
|
Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 65mOhm @ 500mA, 10V | 4V @ 250µA | 175 nC @ 10 V | ±15V | 13400 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IMZA65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
3,723 | - |
|
Datenblatt |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF630STRLMOSFET N-CH 200V 9A D2PAK |
2,659 | - |
|
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IRF630STRRMOSFET N-CH 200V 9A D2PAK |
2,231 | - |
|
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
2SK2371-AN-CHANNEL POWER MOSFET |
302 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF634LMOSFET N-CH 250V 8.1A I2PAK |
3,181 | - |
|
Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
|
2SK1285-AZN-CHANNEL POWER MOSFET |
700 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF634STRLMOSFET N-CH 250V 8.1A D2PAK |
3,209 | - |
|
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IRF634STRRMOSFET N-CH 250V 8.1A D2PAK |
2,504 | - |
|
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TW048N65C,S1FG3 650V SIC-MOSFET TO-247 48MOH |
2,174 | - |
|
Datenblatt |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 40A (Tc) | 18V | 65mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | 175°C | Through Hole |
|
|
IRF640LMOSFET N-CH 200V 18A I2PAK |
2,892 | - |
|
Datenblatt |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRF640STRLMOSFET N-CH 200V 18A D2PAK |
2,946 | - |
|
Datenblatt |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTE464MOSFET-P CHANNEL AMP/SW |
3,957 | - |
|
Datenblatt |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 25 V | 10A | 10V | 600Ohm @ 0A, 10V | 5V @ 10A | - | ±30V | 5000 pF @ 10 V | Standard | 800mW (Tc) | 175°C (TJ) | Through Hole |
|
|
IRF362N-CHANNEL HERMETIC MOS HEXFET |
160 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT38F80B2MOSFET N-CH 800V 41A T-MAX |
2,446 | - |
|
Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXTH60N20L2MOSFET N-CH 200V 60A TO247 |
3,261 | - |
|
Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDH50N50MOSFET N-CH 500V 48A TO247-3 |
761 | - |
|
Datenblatt |
Tube | UniFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | ±30V | 6460 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
4AM14P-CHANNEL POWER MOSFET |
202 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IXFR44N80PMOSFET N-CH 800V 25A ISOPLUS247 |
2,481 | - |
|
Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 200mOhm @ 22A, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
GCMX080B120S1-E1SIC 1200V 80M MOSFET SOT-227 |
3,515 | - |
|
Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1336 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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