Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRL3103LPBFMOSFET N-CH 30V 64A TO262 |
3,619 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33 nC @ 4.5 V | ±16V | 1650 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRL1004LPBFMOSFET N-CH 40V 130A TO262 |
2,136 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100 nC @ 4.5 V | ±16V | 5330 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRF1010NLPBFMOSFET N-CH 55V 85A TO262 |
3,824 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRL3103D2PBFMOSFET N-CH 30V 54A TO220AB |
2,711 | - |
|
![]() Datenblatt |
Tube | FETKY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 32A, 10V | 1V @ 250µA | 44 nC @ 4.5 V | ±16V | 2300 pF @ 25 V | - | 2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRFZ48NLPBFMOSFET N-CH 55V 64A TO262 |
2,081 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRL2203NLPBFMOSFET N-CH 30V 116A TO262 |
2,274 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRL3705NLPBFMOSFET N-CH 55V 89A TO262 |
3,129 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRFB42N20DPBFMOSFET N-CH 200V 44A TO220AB |
2,820 | - |
|
![]() Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 44A (Tc) | 10V | 55mOhm @ 26A, 10V | 5.5V @ 250µA | 140 nC @ 10 V | ±30V | 3430 pF @ 25 V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
SQJA84EP-T1_GE3MOSFET N-CH 80V 46A PPAK SO-8 |
3,457 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 46A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
FDMS8820MOSFET N-CH 30V 28A/116A 8PQFN |
2,109 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 116A (Tc) | 4.5V, 10V | 2mOhm @ 28A, 10V | 2.5V @ 250µA | 88 nC @ 10 V | ±20V | 5315 pF @ 15 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
ZXMP4A16KTCMOSFET P-CH 40V 6.6A TO252-3 |
2,171 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 6.6A (Ta) | 4.5V, 10V | 60mOhm @ 3.8A, 10V | 1V @ 250µA | 29.6 nC @ 10 V | ±20V | 965 pF @ 20 V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
AON7254MOSFET N-CH 150V 5.5A/17A 8DFN |
2,529 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | AlphaMOS | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5.5A (Ta), 17A (Tc) | 4.5V, 10V | 54mOhm @ 5A, 10V | 2.7V @ 250µA | 20 nC @ 10 V | ±20V | 675 pF @ 75 V | - | 4.1W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
TSM260P02CX6 RFGMOSFET P-CHANNEL 20V 6.5A SOT26 |
2,134 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Tc) | 1.8V, 4.5V | 26mOhm @ 5A, 4.5V | 1V @ 250µA | 19.5 nC @ 4.5 V | ±10V | 1670 pF @ 15 V | - | 1.56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SI7716ADN-T1-GE3MOSFET N-CH 30V 16A PPAK1212-8 |
3,082 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 13.5mOhm @ 10A, 10V | 2.5V @ 250µA | 23 nC @ 10 V | ±20V | 846 pF @ 15 V | - | 3.5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SQJ479EP-T1_GE3MOSFET P-CH 80V 32A PPAK SO-8 |
3,007 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Tc) | 4.5V, 10V | 33mOhm @ 10A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
DMTH6009LK3Q-13MOSFET N-CH 60V 14.2A/59A TO252 |
3,791 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14.2A (Ta), 59A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5 nC @ 10 V | ±20V | 1925 pF @ 30 V | - | 3.2W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
PSMN020-100YS,115MOSFET N-CH 100V 43A LFPAK56 |
3,931 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 10V | 20.5mOhm @ 15A, 10V | 4V @ 1mA | 41 nC @ 10 V | ±20V | 2210 pF @ 50 V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
ZXMN10A25GTAMOSFET N-CH 100V 2.9A SOT223 |
2,283 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.9A (Ta) | 10V | 125mOhm @ 2.9A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 859 pF @ 50 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
DMP2003UPS-13MOSFET P-CH 20V 150A PWRDI5060-8 |
3,622 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 150A (Tc) | 2.5V, 10V | 2.2mOhm @ 25A, 10V | 1.4V @ 250µA | 177 nC @ 10 V | ±12V | 8352 pF @ 10 V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SISS05DN-T1-GE3MOSFET P-CH 30V 29.4A/108A PPAK |
3,261 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 29.4A (Ta), 108A (Tc) | 4.5V, 10V | 3.5mOhm @ 10A, 10V | 2.2V @ 250µA | 115 nC @ 10 V | +16V, -20V | 4930 pF @ 15 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |