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Transistoren von FETs, MOSFETs von Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EMB1426QMME/NOPBEMB1426 - HALF BRIDGE BASED MOSF |
500 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SK3354-AZ2SK3354-AZ - SWITCHING N-CHANNEL |
946 | - |
|
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 83A (Tc) | 4V, 10V | 8mOhm @ 42A, 10V | 2.5V @ 1mA | 106 nC @ 10 V | ±20V | 6300 pF @ 10 V | - | 1.5W (Ta), 100W (Tc) | 150°C | Through Hole | |
|
|
2SK3357-A2SK3357 - N-CHANNEL POWER MOSFET |
294 | - |
|
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Ta) | 4V, 10V | 5.8mOhm @ 38A, 10V | 2.5V @ 1mA | 170 nC @ 10 V | ±20V | 9800 pF @ 10 V | - | 3W (Ta), 150W (Tc) | 150°C | Through Hole | |
|
IAUA250N04S6N007AUMA1MOSFET_(20V 40V) PG-HSOF-5 |
2,769 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 435A (Tj) | 7V, 10V | 0.7mOhm @ 100A, 10V | 3V @ 130µA | 151 nC @ 10 V | ±20V | 9898 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
P3M06120K3SICFET N-CH 650V 27A TO-247-3 |
3,935 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | - | +20V, -8V | - | - | 131W | -55°C ~ 175°C (TJ) | Through Hole |
|
P3M06120K4SICFET N-CH 650V 27A TO-247-4 |
2,662 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | - | +20V, -8V | - | - | 131W | -55°C ~ 175°C (TJ) | Through Hole |
|
IPZ65R095C7IPZ65R095 - 650V AND 700V COOLMO |
410 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N6847POWER FIELD-EFFECT TRANSISTOR, P |
186 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUIRFP2907AUIRFP2907 - 75V-100V N-CHANNEL |
450 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDP039N08B-F102MOSFET N-CH 80V 120A TO220-3 |
399 | - |
|
Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | ±20V | 9450 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SPB11N60C3ATMA1MOSFET N-CH 650V 11A TO263-3 |
2,029 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
P3M06060T3SICFET N-CH 650V 46A TO220-3 |
2,150 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 170W | -55°C ~ 175°C (TJ) | Through Hole |
|
P3M06060K3SICFET N-CH 650V 48A TO247-3 |
2,150 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Through Hole |
|
P3M06060K4SICFET N-CH 650V 48A TO247-4 |
3,790 | - |
|
Datenblatt |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Through Hole |
|
|
NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN |
1,000 | - |
|
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | Surface Mount | |
|
2SK2887TLMOSFET N-CH 200V 3A CPT3 |
3,267 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Ta) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 1mA | 8.5 nC @ 10 V | ±30V | 230 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | Surface Mount |
|
|
RK3055ETLMOSFET N-CH 60V 8A CPT3 |
2,692 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 10V | 150mOhm @ 4A, 10V | 2.5V @ 1mA | - | ±20V | 520 pF @ 10 V | - | 20W (Tc) | 150°C (TJ) | Surface Mount |
|
RK7002AT116MOSFET N-CH 60V 300MA SST3 |
3,657 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4V, 10V | 1Ohm @ 300mA, 10V | 2.5V @ 1mA | 6 nC @ 10 V | ±20V | 33 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount |
|
RSS075P03TBMOSFET P-CH 30V 7.5A 8SOP |
2,209 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 30 nC @ 5 V | ±20V | 2900 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount |
|
IRFB3507MOSFET N-CH 75V 97A TO220AB |
2,073 | - |
|
Datenblatt |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130 nC @ 10 V | ±20V | 3540 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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