Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDMS7670POWER FIELD-EFFECT TRANSISTOR, 2 |
2,533 | - |
|
Datenblatt |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 42A (Tc) | 4.5V, 10V | 3.8mOhm @ 21A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 4105 pF @ 15 V | - | 2.5W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
BUK7506-55A,127NEXPERIA BUK7506-55A - POWER FIE |
2,985 | - |
|
Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.3mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
FCPF16N60NTPOWER FIELD-EFFECT TRANSISTOR, 1 |
3,322 | - |
|
Datenblatt |
Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3 nC @ 10 V | ±30V | 2170 pF @ 100 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
PSMN8R5-100PSFQNEXPERIA PSMN8R5 - NEXTPOWER 100 |
3,657 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 98A (Ta) | 7V, 10V | 8.7mOhm @ 25A, 10V | 4V @ 1mA | 44.5 nC @ 10 V | ±20V | 3181 pF @ 50 V | - | 183W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | |
IPD60R380P6ATMA1XPD60R380 - LOW POWER_LEGACY |
2,318 | - |
|
Datenblatt |
Bulk | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDC606PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,619 | - |
|
Datenblatt |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 26mOhm @ 6A, 4.5V | 1.5V @ 250µA | 25 nC @ 4.5 V | ±8V | 1699 pF @ 6 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFS7430PBFTRENCH <= 40V |
2,140 | - |
|
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | ||
IRF6623TRPBFIRF6623 - 12V-300V N-CHANNEL POW |
2,842 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1360 pF @ 10 V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | |
RF1S530SM9A14A, 100V, 0.16OHM, N-CHANNEL PO |
3,791 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
AUIRFB8407AUIRFB8407 - 20V-40V N-CHANNEL A |
2,428 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
AUIRF1405ZS-7PAUIRF1405 - 55V-60V N-CHANNEL AU |
2,770 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
AUIRF6218SAUIRF6218 - 20V-150V P-CHANNEL A |
2,565 | - |
|
Datenblatt |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
RFP12N10L12A, 100V, 0.2OHM, N-CHANNEL, MO |
2,513 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
BUK9635-55A,118N-CHANNEL TRENCHMOS LOGIC LEVEL |
2,870 | - |
|
Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 34A (Tc) | 5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1173 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
BUK9E08-55B,127NEXPERIA BUK9E08-55B - 75A, 55V |
2,813 | - |
|
Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45 nC @ 5 V | ±15V | 5280 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | ||
BLA1011-10BLA1011-10 - N-CHANNEL LDMOS AVI |
3,454 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IRFB5620PBFIRFB5620 - 12V-300V N-CHANNEL PO |
2,832 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
MCH3382-TL-HSMALL SIGNAL FIELD-EFFECT TRANSI |
3,796 | - |
|
Datenblatt |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | 1.8V, 4.5V | 198mOhm @ 1A, 4.5V | - | 2.3 nC @ 4.5 V | ±9V | 170 pF @ 6 V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | |
IPW60R0706P600V COOLMOS N-CHANNEL POWER MOS |
2,484 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
BUK9880-55/CU135NEXPERIA BUK9880-55 3.5A, 55V, 0 |
3,032 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |